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External cavity type narrow-linewidth distributed Bragg reflector laser diode

A distributed Bragg and semiconductor technology, used in semiconductor lasers, lasers, laser parts and other directions, can solve the problems affecting the output stability and linewidth characteristics of external cavity lasers, low reflectivity of anti-reflection coatings, etc., and achieve reduced mode The effect of competition, reducing difficulty, and reducing production costs

Inactive Publication Date: 2016-11-16
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

If the coating quality is not ideal, it will affect the output stability and linewidth characteristics of the external cavity laser
The solution of realizing narrow linewidth laser through the technology of FP-LD and fiber grating integration often requires the reflectivity of the anti-reflection coating to be lower than 0.1%.

Method used

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  • External cavity type narrow-linewidth distributed Bragg reflector laser diode
  • External cavity type narrow-linewidth distributed Bragg reflector laser diode
  • External cavity type narrow-linewidth distributed Bragg reflector laser diode

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Embodiment Construction

[0016] see figure 1 -As shown in Figure 4, the present invention provides a kind of distributed Bragg reflective semiconductor laser based on external cavity type narrow linewidth, comprising:

[0017] A distributed Bragg reflective semiconductor laser 10 is used to generate laser light in a single longitudinal mode fundamental transverse mode of a predetermined wavelength. The distributed Bragg reflective semiconductor laser 10 is realized by one of the following structures:

[0018] A two-stage distributed Bragg reflective semiconductor laser 10a, comprising two parts of the gain region 101 and the DBR region 102 ( Figure 2a );

[0019] A three-stage distributed Bragg reflective semiconductor laser 10b, including gain region 101, phase region 103 and DBR region 102 three parts ( Figure 2b );

[0020] A four-section distributed Bragg reflective semiconductor laser 10c, comprising rear DBR region 104, phase region 103, gain region 101 and front DBR region 105 four parts (...

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Abstract

The invention relates to an external cavity type narrow-linewidth distributed Bragg reflector laser diode comprising a distributed Bragg reflector laser diode (DBR-LD)body and a Bragg fiber grating. The distributed Bragg reflector laser diode body is used for generating single-longitudinal-mode fundamental-transverse-mode laser with a predetermined wavelength; and the Bragg fiber grating in bidirectional connection with the light path of the distributed Bragg reflector laser diode body is used for carrying out external feeding back on the light that is generated by the distributed Bragg reflector laser diode body and has the predetermined wavelength. According to the invention, on the basis of integration of the DBR-LD and the fiber grating, narrow-linewidth laser outputting is realized. Because the output of the DBR-LD is in a single longitudinal mode and the optical power is mainly centralized on the single longitudinal mode, a strong FP mode caused by film plating can be avoided and a mode jumping problem caused by mode competition can be solved. Besides, the DBR-LD has the wavelength tunable characteristic and the emission wavelength can be aligned at the reflection wavelength of the fiber grating easily, so that the effective external cavity feedback can be realized easily.

Description

technical field [0001] This field relates to technical fields such as coherent optical communication and optical sensing, and in particular relates to a distributed Bragg reflector laser diode (DBR-LD: distributed Bragg reflector laser diode) based on an external cavity type narrow linewidth. Background technique [0002] With the development of social informatization, the communication capacity increases rapidly, and the transmission rate of the single-channel communication system has begun to move towards 400Gbps. Coherent optical communication combined with new modulation methods is an effective way to achieve 400Gbps communication capacity. In the 400Gbps coherent optical communication system, strict requirements are put forward for the linewidth and stability of the transmitter and the local oscillator light source. Theoretical research shows that the linewidth of the laser is required to be controlled in the order of hundreds of kHz in the 400Gbps coherent optical com...

Claims

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Application Information

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IPC IPC(8): H01S5/14H01S5/125H01S5/06
CPCH01S5/146H01S5/06H01S5/125
Inventor 李召松陆丹周旭亮潘教青
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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