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Nitride light emitting diode

A technology of light-emitting diodes and nitrides, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve the problems of different reflected light paths, affecting the light-emitting angle and light extraction efficiency, etc.

Active Publication Date: 2016-11-30
XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, different opening angles of V-pits have different reflection paths of light emitted by quantum wells, which directly affect the light-emitting angle and light extraction efficiency. Therefore, it is necessary to propose a nitride light-emitting diode that can adjust the opening angle of V-pits.

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0020] Tensile stress is applied to both sides of the V-Pits sidewall to make its opening angle larger. First, on the sapphire substrate 100, epitaxially grow the buffer layer 101, N-type nitride 102, multiple quantum wells 103, V-pits 104 due to the extension of dislocations in the multiple quantum wells; then, take out the epitaxial wafer after growing the quantum wells , carry out photolithography and evaporation, and deposit materials with more lattice constants and smaller quantum wells on both sides of the V-pits to form the first stress control layer 105 and the second stress control layer 106; then, above the V-pits The third stress control layer 107 is formed by filling and depositing a material with a larger lattice constant than the quantum well; finally, depositing a P-type nitride 108 and a P-type contact angle layer 109 in sequence. The first, second, and third stress control layers form tensile stress on the side walls of the V-pits, making the opening angle of ...

Embodiment 2

[0022] Compressive stress is applied to both sides of the V-Pits sidewall to make its opening angle smaller. First, on the sapphire substrate 100, epitaxially grow buffer layer 101, N-type nitride 102, multiple quantum wells 103 in sequence, and V-pits 104 are generated due to dislocation extension of multiple quantum wells; then, the epitaxial wafer with quantum wells grown is taken out , carry out photolithography and evaporation, and deposit materials with a larger lattice constant than quantum wells on both sides of the V-pits to form the first stress control layer 105 and the second stress control layer 106; then, above the V-pits Filling and depositing materials with more lattice constants and smaller quantum wells to form the third stress control layer 107; finally, depositing P-type nitride 108 and P-type contact angle layer 109 in sequence. The first, second, and third stress control layers form compressive stress on the side walls of the V-pits, making the opening an...

Embodiment 3

[0024] The stress control layer controls the tensile stress on both sides of the sidewall of the V-Pits through the magnetoelastic stress, so that the opening angle becomes larger. First, on the sapphire substrate 100, epitaxially grow buffer layer 101, N-type nitride 102, multiple quantum wells 103 in sequence, and V-pits 104 are generated due to dislocation extension of multiple quantum wells; then, the epitaxial wafer with quantum wells grown is taken out , carry out photolithography and evaporation, and deposit magnetoelastic compressive stress materials on both sides of the V-pits to form the first stress control layer 105 and the second stress control layer 106; then, fill the deposition magnetic field above the V-pits The third stress control layer 107 is formed from a material that induces elastic tensile stress; finally, a P-type nitride 108 and a P-type contact angle layer 109 are deposited in sequence. Place the nitride light-emitting diode in a magnetic field, and ...

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Abstract

The invention discloses a nitride light emitting diode. The nitride light emitting diode comprises a substrate, an N-type nitride, a multi-quantum well, V-pits, stress control layers, a P-type nitride and a P-type contact layer, wherein the stress control layers are at least arranged at two sides of and / or above the V-pits of a multi-quantum well region, tensile stress or pressure stress is applied to side walls of the V-pits by adjusting tensile stress or pressure stress of the stress control layers, an opening angle Theta of the V-pits is controlled, the reflectivity of the V-pits on emergent light of the multi-quantum pit MQW is controlled, the influence of a total reflection angle on emergent light is reduced, the light extraction efficiency is improved, and the luminous intensity and the luminous efficiency of the nitride light emitting diode are improved.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to a nitride light-emitting diode with adjustable V-pits opening angle. Background technique [0002] Nowadays, light-emitting diodes (LEDs), especially nitride light-emitting diodes, have been widely used in the field of general lighting due to their high luminous efficiency. Because there are defects in the bottom layer of nitride light-emitting diodes, V-pits will be formed when the defects extend when growing quantum wells. The potential barrier of the side wall of V-pits is larger than the potential barrier of multiple quantum wells, which makes it difficult for electrons to transition into the defective non-radiative recombination center of V-pits. At the same time, the side walls of V-pits can reflect the light emitted by multiple quantum wells. Change the luminous angle, reduce the influence of the total reflection angle on the light output, improve the l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/12H01L33/06H01L33/10H01L33/32
CPCH01L33/06H01L33/10H01L33/12H01L33/32
Inventor 郑锦坚钟志白李志明邓和清杜伟华苏龙兴伍明跃周启伦林峰李水清康俊勇
Owner XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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