Heat beam film-forming apparatus
A film-forming device and instant heating technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of plastic or glass deformation, short distance, etc., achieve low-cost processes, and promote film formation Effect that reaction, reaction are easy
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment approach
[0075] Below, refer to Figure 1 to Figure 4 , the embodiment of the present invention will be described. In addition, the film forming apparatus of the present invention can form a film even when the substrate is kept at a low temperature from room temperature to about 100°C.
[0076] figure 1 A schematic diagram showing the basic structure of the thermal beam film forming apparatus of the present invention. The carrier gas 201 of nitrogen is heated by the heat beam heating device 1 (203), and the heat beam heating device 1 (203) uses stainless steel as the material of the flow channel, and the stainless steel uses nickel, iron and chromium with catalytic functions as the main materials. Element. The heated generated gas reaches the guide 210 through the generated gas delivery pipe 204 .
[0077] Similarly, the source gas 205 is heated by the heat beam heating device 2 ( 207 ), and the heated generated gas is guided to the guide 210 through the delivery pipe 208 . The g...
Embodiment 1
[0084] First, an example for confirming the capability of the heat beam cylinder used will be shown.
[0085] The steam and raw methane gas preheated to above 130°C are introduced into the heat beam cylinder and further heated. The temperature of the gas in the heat beam cylinder at this time was set to 540°C. The heat beam cylinder can input a maximum of 1500W of electricity, and the maximum temperature can be raised to 1000°C. Into a 3 / 8 inch tube at the outlet of the cylinder was placed aluminum oxide columnar particles loaded with ruthenium and argon was used as the carrier gas.
[0086] In order to cool the temperature of the generated gas, a cooling mechanism and a water recovery mechanism are connected to the generated gas outlet. When the components of the cooled produced gas were analyzed, it was confirmed that about 30% of methane was changed and hydrogen was produced. The other components are carbon dioxide and carbon monoxide, and the concentration of carbon mon...
Embodiment 2
[0089] pass figure 1 A basic schematic diagram of the structure shown in the film formation. Orthosilicate ethyl (Si(OC 2 h 5 ) 4 : TEOS for short). Water in a cluster state is selected as the source gas of the oxidizing agent. The raw material is a liquid raw material, which is used by bubbling argon to vaporize it. Since it is a liquid, in order to prevent liquefaction in the middle of the transport channel, the raw material was transported with a carrier gas of nitrogen preheated to 150° C. by passing through the heat beam cylinder, and the raw material was used as a raw material gas. The gas is heated to 300°C by the heat beam cylinder installed in the decompression reaction chamber for reheating, and directed to the silicon wafer substrate at room temperature placed in the decompression reaction chamber, alternately combined.
[0090] Since the instantaneous heating mechanism of the raw material gas of the heat beam cylinder is made of SUS, it contains nickel, iro...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More 