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Thin film transistor and fabrication method thereof

A technology of thin film transistor and manufacturing method, applied in transistor, semiconductor/solid-state device manufacturing, semiconductor device and other directions, can solve the problems of long time, complicated process and increased production cost, etc.

Inactive Publication Date: 2016-12-14
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Claims
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Problems solved by technology

[0006] The existing N+IGZO (i.e. N-type doping) methods all use doping, that is, after the IGZO is finished, heavy metals or H+ are implanted into the IGZO; the process is complicated and the time is long, which greatly increases the production capacity. cost

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  • Thin film transistor and fabrication method thereof
  • Thin film transistor and fabrication method thereof
  • Thin film transistor and fabrication method thereof

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Embodiment Construction

[0033] The present invention will be further described below in conjunction with accompanying drawing.

[0034] image 3 It is the structural diagram of the thin film transistor of the present invention, and the gate layer 6, the gate insulating layer 5, the indium gallium zinc oxide layer 4, the source and the drain are arranged sequentially from the inside to the outside, and the source and the drain are respectively arranged in sequence from the inside to the outside There is a first metal layer 13 , a second metal layer 12 and a third metal layer 11 , wherein the first metal layer 13 is in contact with the indium gallium zinc oxide layer 4 .

[0035] As a further improvement, the first metal layer 13 is metal indium, the second metal layer 12 is one of metal molybdenum or titanium, and the third metal layer 11 is one of metal copper or aluminum.

[0036] As a further improvement, a passivation layer 10 is provided above the source electrode, the drain electrode and the in...

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Abstract

The invention proposes a thin film transistor and a fabrication method thereof. A source and a drain of the thin film transistor are respectively provided with a first metal layer, a second metal layer, a third metal layer, the first metal layer is in contact with an indium gallium zinc oxide layer, and a metal diffusion layer is arranged on a contact surface of the first metal layer and the indium gallium zinc oxide layer. The invention simultaneously proposes the fabrication method of the thin film transistor. The fabrication method comprises the following steps of sequentially depositing to obtain the first metal layer, the second metal layer and the third metal layer, depositing to obtain a PV layer on the basis of a chemical vapor deposition (CVD) mode, performing high-temperature annealing processing on the PV layer so that metal in the first metal layer is diffused to the indium gallium zinc oxide layer to form the metal diffusion layer. The first metal layer and the indium gallium zinc oxide layer form ohmic contact by the metal diffusion layer, a destitute region of an interface becomes narrow, and more chances are provided for direct tunneling of electrons.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor and a manufacturing method thereof. Background technique [0002] IGZO is the abbreviation of indium gallium zinc oxide (indium gallium zinc oxide). Amorphous IGZO material is a channel layer material used in the new generation of thin film transistor technology. It is a thin film transistor technology, which refers to the TFT-LCD On the active layer, a layer of metal oxide is applied. To put it simply, IGZO is actually only a channel layer material, not a new panel technology. It is not a concept of the same level as IPS, SVA, and OLED. Generally speaking, IGZO is still within the scope of TFT-LCD. IGZO material was first proposed by Hideo Hosono of Tokyo Institute of Technology in Japan and applied in the TFT industry. IGZO-TFT technology was first mass-produced in Sharp Corporation of Japan. [0003] TFT (Thin Film Transistor) refers to a thin film tr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28H01L29/49H01L21/336H01L29/786
CPCH01L29/24H01L21/322H01L21/443H01L29/45H01L29/66969H01L29/7869H01L29/78606H01L21/28079H01L29/4908H01L29/4958H01L29/66742
Inventor 石龙强
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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