Junction terminal structure for transverse high voltage power device

Abstract

The invention provides a junction terminal structure for a transverse high voltage power device. The junction terminal structure comprises a linear junction terminal structure and a curvature junction terminal structure; the curvature junction terminal structure comprises a drain electrode N+ contact zone, an N type drift zone, a P type substrate, grid electrode polycrystalline silicon, a gate oxide layer, a P-well zone and a source electrode P+ contact zone; the N+ contact zone, the grid electrode polycrystalline silicon and the gate oxide layer in the curvature junction terminal structure are respectively connected with an N+ contact zone, a grid electrode polycrystalline silicon and a gate oxide layer in the linear junction terminal structure so as to form an annular structure; the N type drift zone is divided into N subzones which are 21, 22 ... 2N from an internal boundary to an external boundary; the drain electrode N+ contact zone encloses the subzones which are 21, 22 ... 2N. An N type dosage concentration at a junction between the N type drift zone and the P type substrate in a curvature junction terminal part in the junction terminal structure disclosed in the invention is much lower than that in a traditional structure, the N type drift zone can be effectively exhausted by the P type substrate, and therefore voltage resistance of a device can be well optimized.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a junction terminal structure of a lateral high-voltage power device. Background technique [0002] The development of high-voltage power integrated circuits is inseparable from the integration of lateral high-voltage power semiconductor devices. Lateral high-voltage power semiconductor devices are usually closed structures, including circular, racetrack and interdigitated structures. For the traditional interdigitated structure, the concentration of the substrate in the curvature terminal region is very low, while the concentration in the drift region is relatively high, so the substrate cannot fully assist in depleting the drift region, which has a certain impact on the high breakdown voltage of the device. [0003] The Chinese patent with publication number CN102244092A discloses a junction terminal structure of a lateral high-voltage power device, figure ...

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Problems solved by technology

[0004] What the present invention aims to solve is to solve the problem that the N-type impurities in the drift region with high doping concentration in the curvature terminal structure of the above-mentioned traditional device cannot be fully depleted by the P-type impurities in the substrate with low doping concentration. The charge imbalance at the bottom junction affects the withstand voltage and reliability, and a junction terminal structure for lateral high-voltage power devices is proposed

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