Crystal pulling method for single crystal by Czochralski pulling

A single crystal and Czochralski technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of high cost and low yield of single crystal, and achieve the goal of improving the yield of crystal pulling, The effect of reducing production costs and improving crystal quality

Active Publication Date: 2017-01-11
NINGXIA LONGI SILICON MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a crystal pulling method for Czochralski single crystal, which solves the problems of high single crystal pulling cost and low yield when poor-quality polysilicon is Czochralski single crystal

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A kind of crystal pulling method of Czochralski single crystal provided by the present invention comprises the following steps:

[0029] The first step, charging: mix the polysilicon raw material and the redrawing material in the quartz crucible according to the mass ratio of 2:1, and the polysilicon raw material is installed in the middle and the top of the quartz crucible, and close to the edge of the quartz crucible. For redrawing materials, it is necessary to ensure that the raw materials are packed compactly during the charging process, and the sharp parts of the raw materials cannot be directly facing the inner wall of the quartz crucible;

[0030] The second step, chemicals, specifically includes the following steps:

[0031] In the first step, when the chemical material is started, the heater operates at a conventional chemical material power of 75kW, and the quartz crucible rotates at 1 revolution / min of the conventional rotational speed;

[0032] In the secon...

Embodiment 2

[0040] A kind of crystal pulling method of Czochralski single crystal provided by the present invention comprises the following steps:

[0041] The first step, charging: mix the polysilicon raw material and the redrawing material in the quartz crucible according to the mass ratio of 3:1, and the polysilicon raw material is installed in the middle and the top of the quartz crucible, and it is placed near the edge of the quartz crucible. For redrawing materials, it is necessary to ensure that the raw materials are packed compactly during the charging process, and the sharp parts of the raw materials cannot be directly facing the inner wall of the quartz crucible;

[0042] The second step, chemicals, specifically includes the following steps:

[0043] In the first step, when the chemical material is started, the heater operates at a conventional chemical material power of 75kW, and the quartz crucible rotates at 1 revolution / min of the conventional rotational speed;

[0044] In ...

Embodiment 3

[0052] A kind of crystal pulling method of Czochralski single crystal provided by the present invention comprises the following steps:

[0053] The first step, charging: mix the polysilicon raw material and the redrawing material in the quartz crucible according to the mass ratio of 4:1, and the polysilicon raw material is installed in the middle and top of the quartz crucible, and the quartz crucible is placed near the edge. For redrawing materials, it is necessary to ensure that the raw materials are packed compactly during the charging process, and the sharp parts of the raw materials cannot be directly facing the inner wall of the quartz crucible;

[0054] The second step, chemicals, specifically includes the following steps:

[0055] In the first step, when the chemical material is started, the heater operates at a conventional chemical material power of 75kW, and the quartz crucible rotates at 1 revolution / min of the conventional rotational speed;

[0056] In the second...

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PUM

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Abstract

The invention provides a crystal pulling method for a single crystal by Czochralski pulling. The crystal pulling method is composed of seven steps of material filling, material melting, impurity extraction, stabilizing treatment, seeding, diameter enlarging, and ending. The crystal pulling method for the single crystal by Czochralski pulling provided by the invention solves the problems of high cost and low yield of single crystal pulling for polycrystalline silicon with poor quality during Czochralski pulling of the single crystal. The crystal pulling method for the single crystal by Czochralski pulling provided by the invention realizes separation and extraction of a polycrystalline raw material with a plurality of impurities and poor quality through changing of steps and parameters in the process of crystal pulling, so the quality of crystal after crystal pulling is improved; the yield of crystal pulling is increased; and the purposes of improving production efficiency and reducing production cost are achieved.

Description

technical field [0001] The invention belongs to the technical field of Czochralski single crystal method, and in particular relates to a crystal pulling method of Czochralski single crystal. Background technique [0002] At present, more than 80% of the silicon single crystals used in the solar photovoltaic industry are manufactured by the Czochralski method. Set a certain power, heat and melt it, then reduce the power of the heater, control a certain degree of supercooling, use the oriented seed crystal to contact the melted polysilicon liquid, and adjust the temperature of the solution and the speed of the seed crystal to make the seed The crystal grows up to the specified length, and then carries out operations such as putting shoulders, turning shoulders, and equal diameters to grow single crystals with equal diameters. When there is less molten silicon in the quartz crucible, in order to improve the yield, after equal diameters are completed, Carry out the finishing op...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/20C30B29/06
Inventor 杨林陈立军白忠学
Owner NINGXIA LONGI SILICON MATERIALS
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