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A kind of volatile and non-volatile hybrid memory and its preparation method

A non-volatile, memory technology, applied in the direction of electrical components, etc., to achieve the effect of excellent transparency and simple steps

Active Publication Date: 2020-09-25
NANJING TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional memory is mainly focused on the realization of single-function devices. With the advent of the "post-Moore" era, traditional single-function memory has become increasingly unable to meet people's needs. Therefore, the design and preparation of multi-functional memory has become the current development of semiconductor science. an urgent problem in

Method used

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  • A kind of volatile and non-volatile hybrid memory and its preparation method
  • A kind of volatile and non-volatile hybrid memory and its preparation method
  • A kind of volatile and non-volatile hybrid memory and its preparation method

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preparation example Construction

[0028] The preparation method of volatile and non-volatile mixed multi-function memory comprises the following steps:

[0029] (1) prepare the bottom electrode on the quartz substrate by wet spraying by PEDOT:PSS aqueous solution;

[0030] (2) prepare storage active layer on described bottom electrode by wet spin-coating by graphene oxide alcohol solution;

[0031] (3) The top electrode was prepared from PEDOT:PSS aqueous solution on the storage active layer by wet spraying.

[0032] The performance of the volatile and non-volatile mixed multi-function memory prepared by the above method is analyzed, such as Figure 2-4 Shown:

[0033] like figure 2 As can be seen from the I-V relationship curves of the volatile and non-volatile storage processes of the memory, when the negative scanning voltage is applied, the current shows a sharp upward trend, indicating that at 0-3V, the device first presents "low resistance state". When we continued to increase the scanning voltage,...

Embodiment 1

[0037] Embodiment 1: The preparation method of graphene oxide active intermediate layer.

[0038] Graphene oxide preparation: 2g expanded graphite, 1g NaNO 3 , 6g KMnO 4 with 46ml concentrated H 2 SO 4 After mixing in an ice-water bath, stir for 30 minutes, then heat to 35° C. and continue stirring for 8 hours. Then add 92ml of ultrapure water at 40°C, keep stirring and heat the system to 95°C, and react for 15 minutes. Finally, 280ml of 40°C deionized water and 20ml of hydrogen peroxide were added. Cool to room temperature, centrifuge and wash with 5 wt% hydrochloric acid aqueous solution for 3 times, and then centrifuge and wash with deionized water for 5 times to obtain graphene oxide.

[0039]Preparation of the middle active layer of graphene oxide: prepare 0.05 mg / ml graphene oxide aqueous solution, ultrasonically disperse for 1 minute, and then centrifuge at 3000 rpm to remove a very small amount of large particles in the solution. When forming a film by spin coati...

Embodiment 2

[0040] Example 2: Preparation method of carbon-based multifunctional storage device

[0041] After the quartz glass substrate was ultrasonically cleaned with deionized water, absolute ethanol and acetone, it was covered with a patterned mask, and the bottom electrode was prepared by heating and spraying. The electrode material was PEDOT:PSS conductive polymer with a solid content of 1.2wt%, and Doped with 4 wt% DMSO. The heating temperature of the substrate during spraying is 100°C, and the PEDOT:PSS electrode is completely cured by continuing to heat for 1 hour after spraying. After the bottom electrode is prepared, the graphene oxide active middle layer is prepared by spin coating, and finally the top electrode is prepared by heating and spraying to obtain a multifunctional memory based on carbon materials. The performance of the device is tested by a semiconductor parameter analyzer.

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Abstract

The invention discloses a volatile and nonvolatile hybrid memory and a preparation method thereof. The multifunctional memory comprises a base, a bottom electrode, a storage active layer and a top electrode; the bottom electrode is located on the surface of the base, and the storage active layer Located between the intersecting bottom electrode and the top electrode; the preparation method includes: (1) wet preparation of the bottom electrode, (2) wet preparation of the storage active layer on the bottom electrode, (3) wet preparation of the top electrode on the middle layer . The storage device of the present invention has unique volatile and non-volatile hybrid storage performance, high transparency, excellent durability and reliability, and can be fully wet-processed, which is a pioneer for the development of semiconductor science and technology in the post-Moore era. new field.

Description

technical field [0001] The invention relates to the technical field of novel semiconductors, in particular to a volatile and non-volatile hybrid memory and a preparation method thereof. [0002] technical background [0003] With the advent of the "big data" era, massive amounts of information appear in our lives. At the same time, the storage of these massive amounts of information has become a major challenge for the development of storage technology. The search for larger storage capacity, faster read and write speed, More convenient use, lower cost and higher environmental protection performance have become the inevitable trend of memory development under the current "big data" background. [0004] The memory can be divided into volatile (volatile) storage and non-volatile (non-volatile) storage according to its storage type. The volatile storage will lose the stored data after the device is powered off, and the non-volatile storage will lose the stored data. Volatile st...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/20H10N70/841H10N70/883H10N70/021
Inventor 刘举庆时瑞黄维刘洋王展曹立君
Owner NANJING TECH UNIV