qled and its preparation method

A technology of light-emitting layer and hole transport material, which is applied in the field of QLED and its preparation, can solve the problems of low carrier mobility and the thickness of quantum dot light-emitting layer, etc., to improve luminous efficiency and brightness, reduce driving voltage, The effect of good application prospects

Active Publication Date: 2019-11-26
TCL CORPORATION
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Problems solved by technology

[0005] The purpose of the present invention is to provide a QLED and its preparation method, aiming to solve the problem that the low carrier mobility of the existing QLED device affects the luminous efficiency of the device, and the thin thickness of the quantum dot light-emitting layer affects the service life during the period

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  • qled and its preparation method
  • qled and its preparation method

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Embodiment Construction

[0019] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0020] combine Figure 1-3 , the embodiment of the present invention provides a QLED, such as figure 1 As shown, it includes a first electrode 1, a hole injection layer 2, a hole transport layer 3, a light emitting layer 4, an electron transport layer 5 and a second electrode 6 arranged in sequence, and the light emitting layer 4 is composed of quantum dot light emitting materials and mixed transport material, the mixed transport material is a hole transport material and an electron transport material, and the hole transport material and the electron transport material form a bicontinuous ...

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Abstract

The invention provides a QLED, comprising a first electrode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and a second electrode arranged in sequence, and the light-emitting layer is composed of a quantum dot light-emitting material and a mixed transport material The mixed transport material is a hole transport material and an electron transport material, and the hole transport material and the electron transport material form a double continuous network structure in the light-emitting layer, and the quantum dot light-emitting material is dispersed in the In the bicontinuous network structure described above.

Description

technical field [0001] The invention belongs to the field of display technology, in particular to a QLED and a preparation method thereof. Background technique [0002] Inorganic nanocrystalline quantum dot luminescent materials have the advantages of saturated color of emitted light and adjustable wavelength, and high photoluminescence and electroluminescence quantum yields, which are suitable for preparing high-performance display devices. In addition, from the perspective of preparation technology, quantum dot luminescent materials can be prepared into films by spin coating, printing, printing equipment and other solution processing methods under non-vacuum conditions. Therefore, quantum dot light-emitting diodes (QLEDs) prepared with quantum dot films have become a strong competitor for next-generation display technologies. [0003] Generally, a QLED device includes an electrode 1 , a hole injection and transport layer, a light emitting layer, an electron transport and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/111H10K50/115H10K2102/00H10K71/00
Inventor 陈崧钱磊杨一行曹蔚然向超宇
Owner TCL CORPORATION
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