An LC low-pass filter based on TSV array

Abstract

The invention discloses a through silicon via array-based LC low-pass filter. The through silicon via array-based LC low-pass filter comprises a top layer, an intermediate layer and a bottom layer; the intermediate layer comprises a semiconductor substrate, an insulating layer and through silicon via metal; the semiconductor substrate is a silicon substrate; through silicon vias which are formed through etching and extend through the upper surface and lower surface of the semiconductor substrate are formed in the semiconductor substrate; the through silicon vias are distributed in a 4-row*5-column array structure; in the array, column spacing is equal to the diameter of the through silicon vias; the row spacing of the first row and the second row is equal to the diameter of the through silicon vias; the row spacing of the second row and the third row is equal to twice of the diameter of the through silicon vias; and the row spacing of the third row and the fourth row is equal to the diameter of the through silicon vias; and the equivalent circuit of the LC low-pass filter of the invention a 7-order LC lumped structure. The through silicon via array-based LC low-pass filter of the invention has the advantages of compact structure, high integration, small area, large inductance, flexible design and good frequency selectivity. According to the through silicon via array-based LC low-pass filter, electromagnetic radiation and coupling noises are effectively eliminated, in-band insertion loss can be effectively reduced, and out-of-band rejection can be increased.

Description

Technical field [0001] The invention relates to an LC low-pass filter, in particular to an LC low-pass filter realized based on a silicon through hole array, belonging to the field of passive devices for radio frequency / microwave integrated circuit applications. Background technique [0002] Over the past few decades, with the rapid development of the electronics industry, microwave technology has been widely used in engineering applications, and at the same time higher requirements have been put forward for the systematic integration of microwave technology. At present, microwave components are developing in the direction of miniaturization and multi-function integration. In many applications, they need to be integrated with ordinary CMOS active circuits to achieve various high-function integration system modules. However, there are Microwave components have not yet achieved this goal. [0003] As a key frequency selection device, the filter is widely used to select or limit the ...

AI Technical Summary

Problems solved by technology

At present, microwave components are developing in the direction of miniaturization and multi-functional integration. In many applications, they need to be system-integrated with common CMOS active circuits to realize various system modules with high functional integration. However, the existing Microwave components are not yet up to the mark

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