Electrode, ion-sensitive sensor, detection method of capacitance and ion activity

Abstract

The invention belongs to the technical field of semiconductor, and discloses an electrode, an ion sensitive sensor, and a capacitance and ion activity detection method The electrode used for detecting capacitance or ion activity of an object to be detected via combination with a metal-oxide-semiconductor field-effect transistor (MOSFET) comprises an insulating substrate and an interdigital electrode formed on the insulating substrate; the interdigital electrode comprises a first electrode and a second electrode; at least the surface of the first electrode is coated with a first ion sensitive membrane; and at least the surface of the second electrode is coated with a second ion sensitive membrane. The electrode, the ion sensitive sensor, and the capacitance and ion activity detection method are capable of realizing separated preparation of the electrode and the metal-oxide-semiconductor field-effect transistor (MOSFET), reducing stray capacitance between the electrode with a silicon wafer effectively, and increasing the accuracy in ion activity or capacitance detection of the object to be detected.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an electrode, an ion-sensitive sensor, and a detection method for capacitance and ion activity. Background technique [0002] Semiconductor ion sensor is a new type of semiconductor device manufactured by semiconductor planar technology based on the basic principle of field effect transistor. It is mainly used to detect ion activity in solution. Because semiconductor ion sensors are easy to realize miniaturization, integration and multifunctionalization, they have attracted the attention of the fields of electrochemistry, solid state physics and biomedicine. [0003] However, in the process of realizing the present invention, the inventors have found that there are at least the following problems in the prior art: because in the prior art, the interdigitated electrodes are directly made on the surface of the silicon wafer, although there is a gap between the interdigitated...

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Problems solved by technology

[0003] However, in the process of realizing the present invention, the inventors have found that there are at least the following problems in the prior art: because in the prior art, the interdigitated electrodes are directly made on the surface of the silicon wafer, although there is a gap between the interdigitated electrodes and the silicon substrate. There is a dielectric layer, but parasitic capacitance will be generated, and the dielectric layer is very thin, which leads to inaccurate detection results due to the existence of the parasitic capacitance when detecting the ion activity or capacitance of the analyte

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