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Adaptive Mesh Movement Method for Complex Compound Semiconductor Devices

An adaptive, semi-conductive technology, applied in instruments, special data processing applications, calculations, etc., can solve problems such as numerical stability, inconsistency in the working curve of compound semiconductor devices, and drastic changes in energy band distribution, so as to improve accuracy , the effect of saving memory processing

Active Publication Date: 2020-02-04
SHANGHAI INST OF SPACE POWER SOURCES
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  • Abstract
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  • Claims
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Problems solved by technology

[0004] However, according to the above situation, it can be seen that the energy band spatial distribution of compound semiconductor devices changes with the external working conditions. Generally, there is a high built-in electric field in these regions, and the main part of the external bias voltage is applied to this region, resulting in drastic changes in the energy band distribution
Most of the current numerical simulation analysis software adopts the grid fixing method, that is, the grid space density distribution does not change during the change of external working conditions. This practice sometimes leads to inconsistency in the working curve of compound semiconductor devices. even numerically stable

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  • Adaptive Mesh Movement Method for Complex Compound Semiconductor Devices
  • Adaptive Mesh Movement Method for Complex Compound Semiconductor Devices
  • Adaptive Mesh Movement Method for Complex Compound Semiconductor Devices

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Embodiment Construction

[0024] Specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings.

[0025] Such as figure 2 As shown, the present invention discloses an adaptive grid movement method for complex compound semiconductor devices with non-localized quantum tunneling. The method specifically includes the following steps:

[0026] S1. Given the working conditions of the device, such as an initial applied bias voltage, an initial grid is generated in the physical area of ​​the discrete semiconductor device, and an initial mapping of the grid nodes from the physical area to the logical area is established.

[0027] The grid is generated according to the geometry of the physical area of ​​the device structure. The method of generating the grid here can be the same as the grid discretization method used in the semiconductor numerical simulation, that is, the grid should be denser where the energy band of the material bends sharply. In ...

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Abstract

The invention discloses an adaptive grid moving method for complex compound semiconductor devices. Grids with non-local quantum tunneling regions are re-distributed by selecting a proper control function according to energy band space distribution characteristics, so that the grids can be centralized in a place with drastic energy band bending. According to the adaptive grid moving method for the compound semiconductor devices with non-local quantum tunneling, the memory processing is reduced, and the numerical analysis precision and the simulation result accuracy can be greatly improved.

Description

technical field [0001] The invention relates to an adaptive grid movement method for complex compound semiconductor devices. Background technique [0002] Current compound semiconductor devices such as lasers, detectors, high-efficiency multi-junction solar cells, microwave radio frequency chips, etc., in order to achieve higher performance, the structure is becoming more and more complex, for example: several quantum wells are introduced into the surface emitting laser to achieve high power , there are multiple quantum confinement regions widely in quantum well infrared detectors to achieve high detection sensitivity, multiple nonlocal quantum tunneling diodes are used in high-efficiency multi-junction solar cells to connect different sub-cells, high Electron mobility transistors include Schottky (Schottky) diodes and quantum wells, and there are several to dozens of heterojunctions in these compound devices. The above-mentioned local structure in the compound device chang...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F30/00G06F119/00
CPCG06F30/33G06F30/367G06F30/39
Inventor 张玮李欣益陆宏波杨丞张华辉张梦炎陈杰郑奕张建琴
Owner SHANGHAI INST OF SPACE POWER SOURCES