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High-numerical-precision quantum tunneling device simulation method

A technology of quantum tunneling and device simulation, applied in the fields of instruments, electrical digital data processing, special data processing applications, etc., can solve the problems such as the inability to accurately reflect the complex effects of the space electric field and the different distribution functions.

Pending Publication Date: 2019-08-16
SHANGHAI INST OF SPACE POWER SOURCES
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Problems solved by technology

[0019] Equation (7) is a physical model widely used in current commercial software. However, for a tunnel junction composed of compound heterogeneous materials, the band-edge state densities of the materials on both sides are not equal, the spatial electric field distribution is non-uniform, and the distribution functions are definitely different. Therefore, the approximation method in (7) cannot accurately reflect the complex effects caused by the non-uniform distribution of the electric field in space and the difference in the distribution function.

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  • High-numerical-precision quantum tunneling device simulation method
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  • High-numerical-precision quantum tunneling device simulation method

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Embodiment Construction

[0081] The following is a detailed introduction to the fully convolutional video description generation method based on the self-optimization mechanism with reference to the accompanying drawings.

[0082] Such as figure 1 As shown, the present invention discloses a high-precision numerical simulation method for quantum tunneling devices. The method specifically includes the following steps:

[0083] S0, preset inner cycle times Number of outer cycles Inner iterative loop step size abort criterion ε 1 with the function value stopping criterion ε 0 , the outer iterative loop step size termination criterion ε 2 , the cycle termination criterion ε in the energy transport equation 3 .

[0084] S1. Initialize the device geometric region grid, and guess the initial value of the grid point variable of the initial grid. Lattice variables include electrostatic potential, electron / hole quasi-Fermi potential, electron / hole ensemble temperature, etc.

[0085] The grid is genera...

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Abstract

The invention discloses a high numerical precision quantum tunneling device simulation method. Grid optimization and partial differential equation set solution for different objects are carried out alternately. Grid optimization is divided into a general grid optimization process and a tunneling grid optimization process, and the numerical calculation precision of the non-local quantum tunneling association item is improved. The specific idea is that according to an energy band curvature, a lattice temperature curvature and a built-in electric field distribution condition in the quantum tunneling device, appropriate different grid discrete control standards and control functions are selected; grid reforming is carried out in different areas in sequence; the numerical values of the energy band region and the lattice temperature region are redistributed, and the grid distribution of the quantum tunneling region is redistributed, so that the grid distribution can fully ensure the numerical accuracy of charge distribution, carrier transport and lattice temperature distribution, and the numerical accuracy of the quantum tunneling probability between the energy bands and between the energy bands and the deep energy level defects can be greatly improved.

Description

technical field [0001] The invention relates to a high numerical precision quantum tunneling device simulation method. [0002] technical background [0003] As a polarity switching and fast switching device, quantum tunneling diodes are widely used in solid-state semiconductor integrated circuit devices represented by multi-junction solar cells (MJSC) and tunneling field-effect diodes (TFETs). increasingly widespread attention. The numerical analysis of quantum tunneling mainly includes localized and nonlocalized two types. The current comprehensive experimental results suggest that the nonlocalized model can more accurately reflect some basic characteristics of tunneling diodes. The basic mechanisms of nonlocal quantum tunneling are mainly divided into two types: 1) direct band-to-band quantum tunneling (BTB) between conduction band electrons at different spatial positions and valence band equal-energy holes; 2) Defect state-to-band quantum tunneling (DTB) between electro...

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Application Information

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IPC IPC(8): G06F17/50
CPCG06F30/20
Inventor 张玮陆宏波李欣益李戈
Owner SHANGHAI INST OF SPACE POWER SOURCES
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