Adaptive grid moving method for complex compound semiconductor devices
An adaptive, semi-conductive technology, applied in instruments, special data processing applications, electrical digital data processing, etc., can solve problems such as inconsistency in the working curve of compound semiconductor devices, numerical stability, and drastic changes in energy band distribution, etc., to achieve The effect of saving memory processing and improving accuracy
Active Publication Date: 2017-03-22
SHANGHAI INST OF SPACE POWER SOURCES
View PDF7 Cites 5 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] However, according to the above situation, it can be seen that the energy band spatial distribution of compound semiconductor devices changes with the external working conditions. Generally, there is a high built-in electric field in these regions, and the main part of the external bias voltage is applied to this region, resulting in drastic changes in the energy band distribution
Most of the current numerical simulation analysis software adopts the grid fixing method, that is, the grid space density distribution does not change during the change of external working conditions. This practice sometimes leads to inconsistency in the working curve of compound semiconductor devices. even numerically stable
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0024] Specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings.
[0025] Such as figure 2 As shown, the present invention discloses an adaptive grid movement method for complex compound semiconductor devices with non-localized quantum tunneling. The method specifically includes the following steps:
[0026] S1. Given the working conditions of the device, such as an initial applied bias voltage, an initial grid is generated in the physical area of the discrete semiconductor device, and an initial mapping of the grid nodes from the physical area to the logical area is established.
[0027] The grid is generated according to the geometry of the physical area of the device structure. The method of generating the grid here can be the same as the grid discretization method used in the semiconductor numerical simulation, that is, the grid should be denser where the energy band of the material bends sharply. In ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses an adaptive grid moving method for complex compound semiconductor devices. Grids with non-local quantum tunneling regions are re-distributed by selecting a proper control function according to energy band space distribution characteristics, so that the grids can be centralized in a place with drastic energy band bending. According to the adaptive grid moving method for the compound semiconductor devices with non-local quantum tunneling, the memory processing is reduced, and the numerical analysis precision and the simulation result accuracy can be greatly improved.
Description
technical field [0001] The invention relates to an adaptive grid movement method for complex compound semiconductor devices. Background technique [0002] Current compound semiconductor devices such as lasers, detectors, high-efficiency multi-junction solar cells, microwave radio frequency chips, etc., in order to achieve higher performance, the structure is becoming more and more complex, for example: several quantum wells are introduced into the surface emitting laser to achieve high power , there are multiple quantum confinement regions widely in quantum well infrared detectors to achieve high detection sensitivity, multiple nonlocal quantum tunneling diodes are used in high-efficiency multi-junction solar cells to connect different sub-cells, high Electron mobility transistors include Schottky (Schottky) diodes and quantum wells, and there are several to dozens of heterojunctions in these compound devices. The above-mentioned local structure in the compound device chang...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/33G06F30/367G06F30/39
Inventor 张玮李欣益陆宏波杨丞张华辉张梦炎陈杰郑奕张建琴
Owner SHANGHAI INST OF SPACE POWER SOURCES