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semiconductor device

A semiconductor, conductive type technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problem of increasing on-resistance, and achieve the effect of improving on-resistance and withstand voltage

Active Publication Date: 2019-08-20
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Conversely, if the impurity concentration of the drift layer is lowered in order to increase the withstand voltage, the on-resistance increases.

Method used

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no. 1 approach

[0020] The semiconductor device according to this embodiment includes: a semiconductor layer having a first surface and a second surface; a drift region of the first conductivity type provided in the semiconductor layer; and a first conductive type drift region provided in the semiconductor layer between the drift region and the first surface. The body region of the second conductivity type; the source region of the first conductivity type of the semiconductor layer disposed between the body region and the first surface; the first gate electrode; sandwiching the body region between the first gate electrode and the first gate electrode the second gate electrode provided; the first gate insulating film provided between the first gate electrode and the body region; the second gate insulating film provided between the second gate electrode and the body region; A first field plate electrode between the second surface and the first gate electrode; a second field plate electrode dispo...

no. 2 approach

[0075] The semiconductor device of this embodiment is the same as that of the first embodiment except that it does not include the first insulating film and the second insulating film. Therefore, descriptions of contents overlapping with those of the first embodiment are omitted.

[0076] Figure 6 It is a schematic cross-sectional view of the semiconductor device of this embodiment. The semiconductor device 200 of the present embodiment is a vertical MOSFET including a gate electrode in a trench.

[0077] The MOSFET 200 of this embodiment includes a silicon layer (semiconductor layer) 10 . Silicon layer 10 has n + type of drain region 12, n － Type or n-type drift region 14, p-type body region 16, n + type source region 18 and p + type of body contact region 20 . Drift zone 14 has n － Type lower region (first region) 14a, n-type middle region (second region) 14b, n － Type upper region (third region) 14c.

[0078] Furthermore, MOSFET 200 includes a first gate electrod...

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Abstract

A semiconductor device comprising: a semiconductor layer having a first surface and a second surface; a drift region of a first conductivity type in the semiconductor layer; a body region of a second conductivity type between the drift region and the first surface; source region of conductivity type; first gate electrode; second gate electrode provided with body region sandwiched between first gate electrode; first and second gate insulating films; second surface and first gate electrode a first field plate electrode between the gate electrodes; a second field plate electrode between the second surface and the second gate electrode; a first region of the first conductivity type in the drift region; arranged between the first region and the second gate electrode a second region between the body regions and having a higher impurity concentration of the first conductivity type than the first region; and a third region provided between the second region and the body region and having a lower impurity concentration of the first conductivity type than the second region.

Description

[0001] Cross References to Related Applications [0002] This application is based on and claims priority from prior Japanese Patent Application No. 2015-179161 filed on September 11, 2015, the entire contents of which are hereby incorporated by reference. [0003] technology area [0004] The embodiments described herein generally relate to semiconductor devices. Background technique [0005] A vertical transistor in which a gate electrode is buried in a trench is used for miniaturization or high performance of the transistor. In vertical transistors, there is a trade-off relationship between the drain / source breakdown voltage (hereinafter also simply referred to as "breakdown voltage") and on-resistance. That is, if the impurity concentration of the drift layer is increased in order to reduce the on-resistance, the withstand voltage is lowered. Conversely, when the impurity concentration of the drift layer is lowered in order to increase the withstand voltage, the on-resi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/40
CPCH01L29/404H01L29/407H01L29/42368H01L29/0878H01L29/7813
Inventor 小林研也
Owner KK TOSHIBA
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