Test Method for Band Defect Density Distribution

Abstract

The invention relates to an energy band defect density distribution testing method. The energy band defect density distribution testing method comprises the following steps that a testing system and a thin film transistor are firstly provided, wherein the testing system comprises an oscilloscope, a pulse generator, a probe table and a current / voltage converter, a semiconductor layer of the thin film transistor is an oxide to be tested, and the thin film transistor is arranged on the probe table, and a source electrode and a drain electrode of the thin film transistor are connected; multiple pulse voltages different in amplitude are exerted through the pulse generator, multiple transient-state current curves are acquired and obtained, transient-state currents behind the falling edge portions of the pulse voltages are integrated to obtain multiple electric quantity values, the multiple electric quantity values are subtracted to obtain multiple electric quantity differences, and then a formula (shown in the description) is utilized to obtain energy band defect density distribution corresponding to energy levels.

Description

Technical field [0001] The invention relates to a method for testing defect density, in particular to a method for testing the energy band defect density distribution of a semiconductor layer oxide in a thin film transistor. Background technique [0002] Crystal defect refers to the distortion of the periodic potential field in the crystal lattice structure due to the change in the arrangement of a few atoms in the crystal. Crystal structure defects are very sensitive to changes in external conditions, such as temperature, pressure, load, radiation, etc., will significantly change the number and distribution of structural defects. The number and distribution of structural defects have an important influence on the properties of materials. For semiconductor materials, structural defects generally affect the performance of crystalline semiconductors by affecting the forbidden band width, the number of carriers, and the mobility. In thin film transistors (TFT), the structural defe...

AI Technical Summary

Problems solved by technology

However, in these methods, the DLTS method and the optical method may cause defects to redistribute and cause interference due to the introduction of factors such as temperature and light, and the accuracy is questionable; the CV method introduces many assumptions and the calculation is complicated; the simulation fitting extraction model is a It is a means of simulation, not obtained directly, and the accuracy of the results is open to question

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