Method for performing rapid thermal annealing process by using thermal annealing equipment

Abstract

The invention provides a method for performing rapid thermal annealing process by using thermal annealing equipment. The method comprises the following steps: separately setting the thermal annealing equipment according to first and second parameters in an idle state and a working state, setting at least one previous heating cavity in a plurality of heating cavities of the thermal annealing equipment as a distinctively set heating cavity, wherein the set temperature of the distinctively set heating cavity in the first parameters is lower than the set temperature of the distinctively set heating cavity in the second parameters, so that when the thermal annealing equipment converts from the idle state into the working state, the temperature difference between a substrate primarily put in the thermal annealing equipment and the substrate put in the thermal annealing equipment in the stable working state in the working state is reduced, thereby reducing the occurrence of TTP mutation, reducing the risk of discarded products, improving the yield of products and increasing the economic values of the products.

Description

Technical field [0001] The present invention relates to the production field of display panels, and in particular to a method for performing rapid thermal annealing process using thermal annealing equipment. Background technique [0002] Thin Film Transistor (TFT) is currently the main driving element in liquid crystal display devices (Liquid Crystal Display, LCD) and organic light-emitting diodes (Organic Light-Emitting Diode, OLED), directly related to high-performance flat panel display devices Development direction. Thin film transistors have a variety of structures, and there are also a variety of materials for preparing the active layer of thin film transistors with corresponding structures. Among them, low temperature poly-silicon (LTPS) material is a more preferred one. In the current conventional LTPS technology, the rapid thermal anneal (RTA) process is often used to reduce the amount of hydrogen (H) in the front layer. Generally, the temperature is higher and the glas...

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Problems solved by technology

like figure 1 As shown, when the thermal annealing equipment is in the idle state, without the influence of the cold glass substrate, the temperature in the heating chamber will be relatively high, generally about 20-30°C higher than the temperature in the stable working state. When the working state is changed, the glass substrate starts to be continuously put into the thermal annealing equipment, and the temperature in the heating chamber will gradually decrease until it is stable due to the influence of the glass substrate, but it takes a certain time for the temperature to stabilize. The temperature of the glass substrates that are first put into the thermal annealing equipment at the initial stage of the state will be relatively high, resulting in a certain difference in the amount of shrinkage between the glass substrates that are placed in the thermal annealing equipment when the working state is stable. The TTP (Total Pitch, collectively referring to the distance between the endpoints of the pixels printed on the substrate) of these glass substrates in the thermal annealing equipment exceeds the specification, which in turn causes the product to be scrapped

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