Semiconductor device and method of forming the same
A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as poor electrical performance, achieve the effects of balancing performance, improving carrier mobility, and reducing junction leakage current
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[0033] It can be seen from the background art that the electrical performance of semiconductor devices formed in the prior art needs to be improved.
[0034] After research, it is found that the operating voltage (Vdd) of the core device and the input / output device in the semiconductor device is quite different. For example, when the operating voltage of the core device is about 0.8V, the operating voltage of the input / output device is about 1.8V or Around 3.3V. Due to the large difference in operating voltage, the junction leakage current (junction leakage) of the core device and the input / output device is also significantly different. When the operating voltage of the core device is around 0.8V, the junction leakage current of the core device is between 0.1pA / μm and 100pA / μm, and when the operating voltage of the input / output device is around 1.8V, the junction leakage current will be greater than 10000pA / μm.
[0035] Therefore, there is an urgent need to solve the problem ...
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