Semiconductor structure and manufacturing method thereof

Abstract

The invention relates to a semiconductor structure and a manufacturing method thereof. The method comprises the steps of providing a base, wherein the base comprises a first depth region, a second depth region and a third depth region; forming a buffer doping ion region in the base of the second depth region; removing a part of the base of the second depth region and the third depth region to form a substrate and fin parts protruding out of the substrate; forming an isolation structures with thickness equal to the depth of the second depth region on the substrate, wherein the fin part exposed out of the isolation structure is a fin part first region, and a part which is not exposed is a fin part second region; forming a punchthrough-prevention doping ion region with an ion type same as that of the buffer doping ion region in the fin part second region, wherein the ion concentration of the punchthrough-prevention doping ion region is larger than that of the buffer doping ion region; forming a grid structure bridging the fin parts; and forming a source-drain doping region in the fin part first region at two sides of the grid structure. The ion concentration of the punchthrough-prevention doping ion region is between that of the source-drain doping region and that of the buffer doping ion region, and thus, the junction leak current between the source-drain doping region and the substrate is reduced.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] In semiconductor manufacturing, with the gradual development of ultra-large-scale integrated circuits, the feature size of integrated circuits continues to decrease. In order to adapt to the reduction of feature size, the channel length of MOSFET field effect transistors is also continuously shortened accordingly. However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so the control ability of the gate to the channel becomes worse, and the gate voltage pinches off the channel. The difficulty is also increasing, making the phenomenon of subthreshold leakage (subthreshold leakage), the so-called short-channel effect (SCE: short-channel effects) more likely to occur. [0003] Therefore, in order to better adapt ...

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Problems solved by technology

[0004] However, the electrical properties of semiconductor devices formed by prior art still need to be improved

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