Passivated quantum dot and preparation method thereof

A technology of quantum dots and quantum dot solution, which is applied in the field of passivation quantum dots and their preparation, can solve the problems that the performance requirements of quantum dots cannot be met, the passivation quantum dots cannot maintain the fluorescence intensity and stability of quantum dots for a long time, and the Reduced photocharge transfer, optimal photostability, and simple methods

Inactive Publication Date: 2017-04-19
TCL CORPORATION
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Problems solved by technology

[0004] The purpose of the present invention is to provide a passivated quantum dot and its preparation method, aiming to solve the problem that the passivated quantum dot prepared by the existing metho

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  • Passivated quantum dot and preparation method thereof
  • Passivated quantum dot and preparation method thereof

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[0014] In order to make the technical problems, technical solutions, and beneficial effects to be solved by the present invention clearer, the following further describes the present invention in detail with reference to embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.

[0015] The embodiment of the present invention provides a passivation quantum dot, comprising a quantum dot and a passivation layer wrapped on the surface of the quantum dot, and the passivation layer is formed by a chemical reaction between halogen ions and cations on the surface of the quantum dot. The inorganic compound film layer.

[0016] Specifically, the quantum dots may be conventional quantum dots, including binary phase quantum dots, ternary phase quantum dots, and quaternary phase quantum dots. Wherein, the binary phase quantum dots include but are not limited to CdS, CdSe, CdTe, In...

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Abstract

The invention provides a passivated quantum dot. The passivated quantum dot comprises a quantum dot body and a passivation layer covering the surface of the quantum dot body, wherein the passivation layer is an inorganic compound membrane layer formed by carrying out chemical reaction on halide ions and positive ions on the surface of the quantum dot body. A preparation method of the passivated quantum dot includes the steps of providing a positive ion precursor and a negative ion precursor and preparing the quantum dot body; preparing halogen gas, dissolving the halogen gas into an organic solvent protected by vacuum or inert gas and preparing a halogen stock solution; and dissolving the quantum dot body to form a quantum dot body solution, adding the halogen stock solution into the quantum dot body solution to form a reaction system, stirring the mixed solutions for generating reaction, and purifying the mixed solutions to obtain the passivated quantum dot.

Description

technical field [0001] The invention belongs to the technical field of quantum dot synthesis, and in particular relates to a passivated quantum dot and a preparation method thereof. Background technique [0002] Quantum dots, as the most potential nanomaterials, lead the trend of science and technology. Regardless of the synthesis method or its corresponding application, the development of quantum dot synthesis technology is always inseparable from one goal, that is, to maximize the excellent performance of quantum dots, such as: the fluorescence intensity, half-peak width, stability, etc. of quantum dots . [0003] The stability of quantum dots is one of the important parameters to evaluate the quantum dot system, and the poor stability of quantum dots will seriously affect the application range of quantum dots. Therefore, technicians have done a lot of research work on the optimization and improvement of the stability of quantum dots, such as preparing quantum dots with ...

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Application Information

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IPC IPC(8): C09K11/02C09K11/88B82Y20/00B82Y30/00B82Y40/00
CPCB82Y20/00B82Y30/00B82Y40/00C09K11/02C09K11/883
Inventor 程陆玲杨一行
Owner TCL CORPORATION
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