Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Passivated quantum dot and preparation method thereof

A technology of quantum dots and quantum dot solution, which is applied in the field of passivation quantum dots and their preparation, can solve the problems that the performance requirements of quantum dots cannot be met, the passivation quantum dots cannot maintain the fluorescence intensity and stability of quantum dots for a long time, and the Reduced photocharge transfer, optimal photostability, and simple methods

Inactive Publication Date: 2017-04-19
TCL CORPORATION
View PDF0 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a passivated quantum dot and its preparation method, aiming to solve the problem that the passivated quantum dot prepared by the existing method cannot maintain the fluorescence intensity and stability of the quantum dot for a long time, especially cannot meet the requirements for extreme Conditional Quantum Dot Performance Requirements Issue

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Passivated quantum dot and preparation method thereof
  • Passivated quantum dot and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0015] An embodiment of the present invention provides a passivated quantum dot, including a quantum dot and a passivation layer wrapped on the surface of the quantum dot, and the passivation layer is formed by a chemical reaction between a halogen ion and a cation on the surface of the quantum dot thin film layer of inorganic compounds.

[0016] Specifically, the quantum dots can be conventional quantum dots, including binary phase quantum dots, ternary phase quantum dots, and quaternary phase quantum dots. Wherein, the binary phase quantum dots include but not limited to CdS, CdSe, CdTe,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a passivated quantum dot. The passivated quantum dot comprises a quantum dot body and a passivation layer covering the surface of the quantum dot body, wherein the passivation layer is an inorganic compound membrane layer formed by carrying out chemical reaction on halide ions and positive ions on the surface of the quantum dot body. A preparation method of the passivated quantum dot includes the steps of providing a positive ion precursor and a negative ion precursor and preparing the quantum dot body; preparing halogen gas, dissolving the halogen gas into an organic solvent protected by vacuum or inert gas and preparing a halogen stock solution; and dissolving the quantum dot body to form a quantum dot body solution, adding the halogen stock solution into the quantum dot body solution to form a reaction system, stirring the mixed solutions for generating reaction, and purifying the mixed solutions to obtain the passivated quantum dot.

Description

technical field [0001] The invention belongs to the technical field of quantum dot synthesis, and in particular relates to a passivated quantum dot and a preparation method thereof. Background technique [0002] Quantum dots, as the most potential nanomaterials, lead the trend of science and technology. Regardless of the synthesis method or its corresponding application, the development of quantum dot synthesis technology is always inseparable from one goal, that is, to maximize the excellent performance of quantum dots, such as: the fluorescence intensity, half-peak width, stability, etc. of quantum dots . [0003] The stability of quantum dots is one of the important parameters to evaluate the quantum dot system, and the poor stability of quantum dots will seriously affect the application range of quantum dots. Therefore, technicians have done a lot of research work on the optimization and improvement of the stability of quantum dots, such as preparing quantum dots with ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C09K11/02C09K11/88B82Y20/00B82Y30/00B82Y40/00
CPCB82Y20/00B82Y30/00B82Y40/00C09K11/02C09K11/883
Inventor 程陆玲杨一行
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com