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Formation method of semiconductor structure

A semiconductor and epitaxial layer technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of difficulty in ensuring the stable performance of fin field effect transistors

Active Publication Date: 2017-04-19
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology

[0004] However, as the size of semiconductor devices continues to shrink, the manufacturing process of fin field effect transistors is challenged, and it is difficult to ensure the stable performance of fin field effect transistors

Method used

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  • Formation method of semiconductor structure

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Embodiment Construction

[0029] As mentioned in the background art, as the size of semiconductor devices continues to shrink, the manufacturing process of the FinFET is challenged, and it is difficult to ensure the stable performance of the FinFET.

[0030] After research, it is found that since the source region and the drain region of the fin field effect transistor are formed in the fin, as the size of the fin continues to shrink, the doping ions in the source region and the drain region will occur in both the horizontal and vertical directions. Diffusion, the dopant ions are more likely to diffuse to the bottom region of the fin, and cause the source region and the drain region to be short-circuited at the bottom region of the fin, thereby easily causing a punch through phenomenon (punch through) at the bottom region of the fin , making the bottom region of the fin prone to leakage current.

[0031] In order to overcome the bottom punch-through phenomenon, one method is to perform anti-puncture im...

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Abstract

A formation method of a semiconductor structure comprises the following steps of providing a substrate, wherein a substrate surface possesses a fin portion; forming an epitaxial layer on a side wall surface of the fin portion, wherein doped ions are arranged in the epitaxial layer; forming a separating layer on the substrate surface, wherein the separating layer is located at a surface of parts of the epitaxial layer and the surface of the separating layer is lower than a top surface of the fin portion; removing the epitaxial layer which is higher than the surface of the separating layer; and after the epitaxial layer which is higher than the surface of the separating layer is removed, carrying out an annealing process so that the doped ions in the epitaxial layer are diffused into the fin portion and a break-through prevention area is formed. Defects in the formed semiconductor structure are reduced and performance of a device formed by the semiconductor structure is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher element density and higher integration. As the most basic semiconductor device, transistors are currently being widely used. Therefore, with the increase of component density and integration of semiconductor devices, the gate size of planar transistors is getting shorter and shorter. The ability of traditional planar transistors to control channel current Weakened, resulting in short channel effect, resulting in leakage current, and ultimately affecting the electrical performance of semiconductor devices. [0003] In order to overcome the short-channel effect of the transistor and suppress the leakage current, a Fin Field Effect Transistor (Fin FET) is proposed i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336
CPCH01L29/66803
Inventor 李勇
Owner SEMICON MFG INT (SHANGHAI) CORP
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