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Method and apparatus for depositing atomic layers on substrate

An atomic layer and substrate technology, which can be used in coatings, metal material coating processes, gaseous chemical plating, etc., and can solve problems such as time-consuming

Inactive Publication Date: 2017-04-19
NEDERLANDSE ORG VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK (TNO)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, atomic layers are substantially thinner
Therefore, applying ALD to deposit a layer of a specific thickness greater than about 10 nanometers is generally quite time-consuming due to the stacking of many atomic layers to achieve such a layer thickness

Method used

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  • Method and apparatus for depositing atomic layers on substrate
  • Method and apparatus for depositing atomic layers on substrate
  • Method and apparatus for depositing atomic layers on substrate

Examples

Experimental program
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Embodiment Construction

[0033] Atomic layer deposition is known as a method for depositing a monolayer of target material in at least two process steps, ie half-cycles. The first of these self-limiting processing steps involves applying precursor gases to the substrate surface. The second of these self-limiting processing steps involves reacting precursor materials to form a monolayer of target material on the substrate. The precursor gas may, for example, contain metal halide vapors such as hafnium tetrachloride (HfCl 4 ), but may alternatively also contain another type of precursor material, such as a metal-organic vapor such as tetrakis(ethylmethylammonium)hafnium or trimethylaluminum (Al(CH 3 ) 3 ). The precursor gas may be injected together with a carrier gas, such as nitrogen, argon, or hydrogen, or mixtures thereof. The concentration of precursor gas in the carrier gas is typically in the range of 0.01 to 1% by volume, but can also be outside this range.

[0034] The reaction of the precu...

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PUM

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Abstract

A method of depositing an atomic layer on a substrate comprises supplying a precursor gas from a precursor-gas supply comprised in a drum, with the drum being rotatable with respect to a sealing piece that receives gas from a gas source. One of the drum or sealing piece comprises one or more gas gas feed channels in fluid connection with the precursor-gas supply and the other of the drum or sealing piece comprises one or more circumferential grooves in its surface sealed by the one of the drum or sealing piece, thereby preventing a fluid flowpath in radial direction and leaving a fluid flow path in circumferential direction. At least one sealed groove is provided with one or more separations separating adjacent zones of process gas feeds in the sealed groove, thus allowing zones to provide for mutually differing process gas compositions to have the precursor gas react near, e.g. on, the substrate, thus depositing a stack of atomic layers of a gradient composition.

Description

technical field [0001] The present invention relates to a method for depositing an atomic layer, preferably an atomic layer stack (stack), on a substrate, the method comprising supplying a precursor gas (precursor gas, precursor gas). The invention also relates to a device for depositing an atomic layer on a substrate, the device comprising a deposition head having a precursor gas supply for supplying a precursor gas to the substrate. Background technique [0002] Atomic layer deposition is known as a method for depositing single layers of target material. Atomic layer deposition differs from, for example, chemical vapor deposition in that atomic layer deposition requires at least two consecutive process steps (ie half-cycles). The first of these self-limiting processing steps involves the application of precursor gases on the substrate surface. The second of these self-limiting processing steps involves the reaction of precursor materials to form the monolayer of target ...

Claims

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Application Information

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IPC IPC(8): C23C16/455C23C16/458H01L21/314H01L51/00H01L51/56
CPCC23C16/45525C23C16/45529C23C16/45551C23C16/45563C23C16/458H10K71/60H10K71/00C23C16/455C23C16/45544
Inventor 保卢斯·威利布罗迪斯·乔治·普特雷蒙德·雅各布斯·威廉默斯·克纳彭
Owner NEDERLANDSE ORG VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK (TNO)