Recovery device and method of monocrystalline-silicon-stick and liquid nitrogen supply device
A recovery device and supply device technology, applied in the directions of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problem of silicon single crystal rod fragments containing metal impurity ions and the like
Active Publication Date: 2017-04-26
ZING SEMICON CORP
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[0035] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0036] The embodiment of the present invention provides a silicon single crystal ingot recovery device, such as figure 1 As shown, it includes: a silicon single crystal rod container 101, which is used to contain silicon single crystal rods to be recovered. Generally, the diameter of the silicon single crystal rod to be recovered is relatively large, such as 100 mm-300 mm in diameter.
[0037] A cover 102 is used to cover and seal the opening of the silicon single crystal rod container 101, so that the single c...
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The invention provides a recovery device and method of a monocrystalline-silicon-stick and a liquid nitrogen supply device. The recovery device of the monocrystalline-silicon-stick comprises a monocrystalline-silicon-stick container, a cover body, a first pipeline, a second pipeline, a third pipeline, and a fourth pipeline, wherein the monocrystalline-silicon-stick container is used for containing the monocrystalline-silicon-stick ready to be recycled, the cover body is used for covering and sealing the monocrystalline-silicon-stick container, the first pipeline penetrates through the cover body and is communicated with the monocrystalline-silicon-stick container, one end of the second pipeline is communicated with the side wall of the monocrystalline-silicon-stick container, one end of the third pipeline is communicated with the side wall of the monocrystalline-silicon-stick container, and the fourth pipeline is communicated with the side wall of the monocrystalline-silicon-stick container. After liquid nitrogen flows into the monocrystalline-silicon-stick container from the second pipeline, hot deionized water flows into the monocrystalline-silicon-stick container from the first pipeline and conducts quenching on monocrystalline-silicon-sticks in the container, the water after quenching is discharged out through the fourth pipeline, and then pollution-free monocrystalline-silicon fragments are collected. In the whole process, no other impurities are introduced, pollution-free and fast recovery of the monocrystalline-silicon-sticks is achieved so that the monocrystalline-silicon-sticks can be convenient for follow-up use; meanwhile, cost is lowered and benefits are increased.
Description
technical field [0001] The invention relates to the field of integrated circuits, in particular to a silicon single crystal rod recovery device and method, and a liquid nitrogen supply device. Background technique [0002] Most semiconductor silicon single crystals are produced by the Czochralski method. In this method, polycrystalline silicon is put into a quartz pot, heated and melted, and then the temperature of the molten silicon is slightly lowered, and a certain degree of supercooling is given, and a silicon single crystal (called a seed crystal) with a specific crystal orientation is combined with the molten silicon. Bulk silicon contact, by adjusting the temperature of the melt and the upward lifting speed of the seed crystal, when the seed crystal grows to the target diameter, increase the lifting speed to make the single crystal grow with a nearly constant diameter. At the end of the growth process, when the silicon melt in the pot has not completely disappeared, ...
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Login to View More IPC IPC(8): C30B33/02C30B29/06
CPCC30B29/06C30B33/02
Inventor 张汝京林志鑫肖德元
Owner ZING SEMICON CORP