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Formation method of contact hole

A technology of contact hole and pad layer, which is applied in the direction of semiconductor/solid-state device components, electrical components, circuits, etc., can solve the problem of increased resistance of contact holes and achieve the effect of avoiding damage

Active Publication Date: 2017-05-03
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, when the barrier layer is deposited, a part of the barrier layer will also be deposited at the bottom of the through hole, and the barrier layer at the bottom of the through hole will lead to an increase in the resistance of the contact hole, so a method for reducing the contact resistance of the contact hole is needed

Method used

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  • Formation method of contact hole
  • Formation method of contact hole
  • Formation method of contact hole

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Embodiment Construction

[0025] Embodiments of the present invention provide a method for forming a contact hole, which will be described in detail below with reference to the accompanying drawings:

[0026] It should be noted that in this embodiment, the formation of a single damascene structure is taken as an example for illustration, and the method of the present invention can also be applied to other via structures, such as plug or straight via structures, which will not be listed here.

[0027] refer to figure 1 In step S11 and Figure 4 , providing a semiconductor substrate 10 .

[0028] The semiconductor substrate 10 can be single crystal silicon or polycrystalline silicon; the semiconductor substrate 10 can also be selected from silicon, germanium, gallium arsenide or silicon germanium compounds; the semiconductor substrate 10 can also be other semiconductor materials; The semiconductor substrate 10 can also be selected from having an epitaxial layer or a silicon-on-epitaxial structure; and ...

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Abstract

Provided is a formation method of a contact hole. The method comprises that a substrate is provided; a cushion layer is formed in the substrate; a dielectric layer covering the substrate and the cushion layer is formed; a through hole is formed from the surface of the dielectric layer to the internal, and the cushion layer is exposed out of the bottom of the through hole; the exposed surface of the cushion layer is processed so that the surface is coarsened; and a conductive material is filled into the through hole to form the contact hole. The surface, exposed out of the bottom of the through hole, of the cushion layer is coarsened, so that a bounding force between a barrier layer formed subsequently and the surface of the cushion layer is weakened, on the premise that the dielectric layer is protected against damage, the thickness of the barrier layer in the bottom of the through hole is easier to reduce by technical means, and the contact resistance of the contact hole is reduced effectively.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a contact hole. Background technique [0002] In integrated circuit technology, contact holes are usually used to realize the interconnection between the upper and lower layers. The specific process includes: first depositing the dielectric layer; then forming a through hole by photolithography and etching; then forming a barrier layer and a seed layer by using a physical vapor deposition (Physical Vapor Deposition, PVD) process; The method of chemical plating (ECP) is used to fill the via hole; the method of chemical mechanical polishing (CMP) is used to planarize the top of the filled via hole. [0003] However, when the barrier layer is deposited, a part of the barrier layer is also deposited at the bottom of the through hole, and the barrier layer at the bottom of the through hole will increase the resistance of the contact hole. Therefore, a m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
CPCH01L21/76801H01L21/76831H01L21/76814H01L21/76844H01L21/02063H01L21/321H01L21/32131H01L21/32134H01L21/32135H01L21/76843H01L21/76804H01L21/76826H01L21/76883H01L23/5226H01L23/5283H01L23/53295
Inventor 刘继全
Owner SEMICON MFG INT (SHANGHAI) CORP
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