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Cmp slurry composition for polishing polycrystalline silicon and polishing method using same

A polysilicon and composition technology, applied in polishing compositions containing abrasives, chemical instruments and methods, other chemical processes, etc., can solve the problems of loss of polysilicon film, reduction of process reliability, inability to selectively remove protrusions, etc. , to achieve the effect of improving surface roughness and increasing removal rate

Active Publication Date: 2021-08-13
K C TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since this method performs multiple surface oxidation and HF treatment processes, in addition to the protrusions, the polysilicon film will be lost, making it impossible to selectively remove the protrusions, and also reduce process reliability.

Method used

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  • Cmp slurry composition for polishing polycrystalline silicon and polishing method using same
  • Cmp slurry composition for polishing polycrystalline silicon and polishing method using same
  • Cmp slurry composition for polishing polycrystalline silicon and polishing method using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0070] Add 1% by weight of surface-modified colloidal cerium oxide polishing particles (PL-3D) with a particle size of 80 nm, 0.3% by weight of succinic acid as a carboxylic acid, and hydroxyethyl ether with a weight average molecular weight of 90,000 as a surface roughness modifier. A CMP slurry composition for polishing polysilicon having a pH value of 4 was prepared by mixing 0.05% by weight of cellulose-based cellulose (HEC) with triethanolamine as a pH adjuster.

[0071] By using the CMP slurry composition for polishing polysilicon, under the evaluation conditions, the pressure was set to 1 psi, the carrier rotation speed (RPM) / platen rotation speed (RPM) was set to 78 / 83, and the polishing time was set to 15 seconds and carried out polishing.

Embodiment 2

[0073] Polishing was performed for 60 seconds by using the same CMP slurry composition for polishing polysilicon as in Example 1.

Embodiment 3

[0075] In Example 1, a CMP slurry composition for polishing polysilicon was prepared in the same manner as in Example 1 except that 0.1% by weight of hydroxyethylcellulose (HEC) was added.

[0076] In Example 1, polishing was performed in the same manner as in Example 1 except for polishing for 60 seconds.

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Abstract

The present invention relates to a CMP slurry composition for polishing polycrystalline silicon and a polishing method using same. A CMP slurry composition for polishing polycrystalline silicon according to an embodiment of the present invention comprises: polishing particles; a surface roughness reducing agent; a polish regulator containing an organic acid; and a pH regulator.

Description

technical field [0001] The invention relates to a CMP slurry composition for polishing polysilicon and a polishing method using the same. Background technique [0002] Low-temperature polysilicon is formed by crystallizing amorphous silicon at low temperature, and is widely used in the channel layer of thin-film transistors. A low-temperature polysilicon film used for a channel layer of a thin film transistor can be obtained by crystallizing an amorphous silicon film using various crystallization methods. [0003] Among crystallization methods of an amorphous silicon film, a crystallization method using a laser is widely used because it has a relatively low thermal effect on an insulating substrate such as a glass substrate, and compared with a solid phase (solid phase) crystallization method, Polycrystalline silicon with excellent physical properties can be formed. [0004] However, in the crystallization method using a laser, since the density difference generated when t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09K3/14H01L21/3105
CPCC09K3/14C09G1/02H01L21/3212B82Y30/00C09K3/1409C09K3/1436C09K3/1454H01L21/31051B82Y40/00
Inventor 李在祐金智慧崔辅爀
Owner K C TECH
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