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SiGe nanowire making method

A production method and nanowire technology, applied in nanotechnology, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of insufficient mobility and achieve the effect of simple operation

Inactive Publication Date: 2017-05-10
DONGGUAN GUANGXIN INTPROP SERVICES CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Silicon-based CMOS devices face physical and technical challenges as channel dimensions shrink further, while the mobility of silicon materials is insufficient for faster, lower-power device performance

Method used

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Examples

Experimental program
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Embodiment Construction

[0018] The present invention is elaborated by specific embodiment:

[0019] A kind of manufacturing method of silicon-germanium nanowire that present embodiment proposes, its concrete steps are as follows:

[0020] (1) Prepare a silicon semiconductor material as a substrate, and perform conventional organic cleaning and RCA cleaning;

[0021] (2) Put the cleaned silicon substrate into an ultra-high vacuum chemical vapor deposition system to grow 30 nanometers thick Si 0.8 Ge 0.2 layer of semiconductor material;

[0022] (3) Then in Si 0.8 Ge 0.2 Growth of SiO on the semiconductor material layer by PECVD 2 The dielectric layer is 30 nanometers;

[0023] (4) Using electron beam lithography and ICP etching to etch out 30 nm wide SiO 2 Nanowires;

[0024] (5) Etching Si with SiO2 as a mask 0.8 Ge 0.2 material layer and silicon substrate;

[0025] (6) In a degradation furnace in an oxygen atmosphere, at an annealing temperature of 450 degrees, the sample is annealed for ...

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Abstract

The invention discloses a SiGe nanowire making method. The method comprises the following steps: (1) a silicon semiconductor material is prepared as a substrate; (2) a SiGe semiconductor material layer with a thickness of 35 nanometer grows on the silicon substrate; (3) a 30-nanometer SiO2 dielectric layer grows on the SiGe semiconductor material layer; (4) electron beam photoetching and an ICP etching method are adopted to etch SiO2 nanowires with a width of 30 nanometer; (5) SiO2 serves as a mask to etch the SiGe material layer and the silicon substrate; (6) the sample is oxidized in an oxygen atmosphere in a 450-DEG annealing mode; (7) a hydrofluoric acid solution is adopted to corrode the sample, and silica is corroded; (8) steps (6) and (7) are circulated for 5 to 6 times; and (9) hydrochloric acid and ammonia water are adopted to clean the sample, and SiGe nanowires are made.

Description

technical field [0001] The invention belongs to the field of microelectronics manufacturing, and in particular relates to a method for manufacturing a silicon-germanium nanowire device structure applied after the 10-nanometer technology node. Background technique [0002] Silicon-based CMOS devices face physical and technological challenges as the channel size shrinks further, while the mobility of silicon materials is insufficient to meet the requirements of faster, lower power device performance. New devices and new structures are considered to be the key to breaking through the technical and physical limitations of silicon-based CMOS and realizing higher performance CMOS devices. Silicon-germanium material is superior to silicon in its mobility characteristics, and the integration process is compatible with silicon CMOS technology. Silicon-germanium material is considered to be one of the most promising channel materials. The performance of a CMOS device can be improved ...

Claims

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Application Information

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IPC IPC(8): H01L21/02B82Y40/00
CPCB82Y40/00H01L21/0245
Inventor 刘丽蓉王勇丁超
Owner DONGGUAN GUANGXIN INTPROP SERVICES CO LTD