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Thin film transistor, fabrication method of thin film transistor, array substrate and fabrication method of array substrate

A technology of thin-film transistors and array substrates, applied in the display field, can solve the problems of grain size fluctuations, affecting TFT performance, uneven grain size polysilicon thin films, etc.

Active Publication Date: 2017-05-10
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the grain size of the polysilicon film formed by this process will fluctuate greatly with the difference of laser energy, resulting in the formation of polysilicon film with uneven grain size, thereby affecting the performance of TFT

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  • Thin film transistor, fabrication method of thin film transistor, array substrate and fabrication method of array substrate
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  • Thin film transistor, fabrication method of thin film transistor, array substrate and fabrication method of array substrate

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Embodiment Construction

[0034] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0035] An embodiment of the present invention provides a thin film transistor, such as Figure 1-Figure 2 As shown, it includes a substrate 10, a polysilicon active layer 11 disposed on the substrate 10, and a first amorphous silicon layer 12 disposed on the surface of the polysilicon active layer 11 close to the substrate 10; the polysilicon active layer 11 overlaps the orthographic projection of the first amorphous silicon layer 12 on the substrate 10 .

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Abstract

Embodiments of the invention provide a thin film transistor, a fabrication method of the thin film transistor, an array substrate and a fabrication method of the array substrate, and relate to the technical field of display. The grain size and uniformity of a polycrystalline silicon active layer can be improved. The thin film transistor comprises a substrate and the polycrystalline silicon active layer arranged on the substrate, and further comprises a first amorphous silicon layer arranged on the surface, close to one side of the substrate, of the polycrystalline silicon active layer, wherein positive projection of the polycrystalline silicon active layer on the substrate is overlapped with that of the first amorphous silicon layer on the substrate.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor and a preparation method thereof, an array substrate and a preparation method thereof. Background technique [0002] Low Temperature Poly-Silicon-Thin Film Transistor (LTPS-TFT) display has the advantages of high resolution, fast response, high brightness, high aperture ratio, etc., and due to the characteristics of LTPS, it has high electron mobility. [0003] Wherein, in the process of preparing the LTPS-TFT, the polysilicon film is generally formed by crystallizing the amorphous silicon film. [0004] However, the grain size of the polysilicon film formed by this process fluctuates greatly with the difference of laser energy, resulting in the formation of polysilicon film with uneven grain size, thereby affecting the performance of TFT. Contents of the invention [0005] Embodiments of the present invention provide a thin film transistor and a manuf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L27/12H01L21/336
CPCH01L27/1274H01L29/66757H01L29/78675H01L29/78696H01L27/1218H01L29/78633H01L29/78603H01L27/1288G02F1/1368G02F2202/104G02F2202/103H01L27/1222H10K59/1213G03F7/30G02F1/134363G03F7/16G03F7/20H01L27/1251H10K59/38H10K59/126
Inventor 任艳伟孙超超张琨鹏方业周徐敬义
Owner BOE TECH GRP CO LTD