A Spin-wave Polarizer with Selective Filtering Properties

A filter characteristic and spin wave technology, applied in the field of spin wave polarizers, achieves the effects of small size, increased speed, and low power consumption

Active Publication Date: 2019-05-31
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Devices that modulate the polarization state of spin waves have not been discovered so far

Method used

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  • A Spin-wave Polarizer with Selective Filtering Properties
  • A Spin-wave Polarizer with Selective Filtering Properties
  • A Spin-wave Polarizer with Selective Filtering Properties

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Experimental program
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Embodiment Construction

[0038] The present invention will be described in detail below in conjunction with specific embodiments and drawings, but the present invention is not limited thereto.

[0039] A spin wave polarizer in the present invention is based on antiferromagnetic nanowires with DMI effect. In this embodiment, it is assumed that the nanowire is infinitely long in both left and right directions. What is used in this embodiment is an artificial antiferromagnetic structure. The nanowire is composed of two layers of ferromagnetic materials with opposite magnetization directions. The two ferromagnetic layers have the known RKKY interaction by introducing a heavy metal layer to achieve antiferromagnetism. Coupled, each magnetic domain is in a perpendicular magnetization state.

[0040] figure 1Shown is the magnetic structure inside the artificial antiferromagnetic nanowire in this embodiment, the nanowire extends along the x direction, and there is an antiferromagnetic domain wall 1 in the m...

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Abstract

The invention belongs to the technical field of magnetic devices, in particular to a spin wave polarizer with selective filtering characteristics. The spin wave polarizer is based on an antiferromagnetic material with DMI effect or an artificial antiferromagnetic structure. Its structure is an antiferromagnetic nanowire. There are two magnetic domains with opposite magnetization directions in the nanowire. The magnetic domain walls between them. When the system has the DMI effect, the linear polarization mode parallel to the magnetic domain wall can pass through without reflection, and the linear polarization mode perpendicular to the magnetic domain wall will be reflected, thereby selectively filtering the spin waves of different polarization modes to achieve The effect of the polarizer. By adjusting the arrangement direction of the nanowires and the position of the magnetic domain wall in the nanowires, the present invention can realize linear bias filtering in any direction. The invention has the advantages of simple structure, easy preparation, low power consumption, easy combination with existing electronic chip technology, and can be used to effectively control the polarization characteristics of spin waves and realize further logical operations.

Description

technical field [0001] The invention belongs to the technical field of magnetic devices, in particular to a spin wave polarizer with selective filtering characteristics. Background technique [0002] Spin is an ideal information carrier following the next-generation information technology that uses electrons and light as information carriers. Spin waves are excited states of magnetism in magnetic insulating materials, which can effectively carry spin information. Unlike the conductive electrons carrying spin information in magnetic conductor materials, the transmission of spin waves is based on ferromagnetic insulating materials, which does not require electrons to move between atoms, so it can more effectively reduce the loss during transmission. At the same time, the spin wave is easy to excite and detect, has high information storage density, low power consumption, easy coupling, and good integration with existing industrial technologies. [0003] The construction of ba...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/00H01L43/10
CPCH10N50/00H10N50/85
Inventor 余伟超兰金肖江
Owner FUDAN UNIV
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