Unlock instant, AI-driven research and patent intelligence for your innovation.

Display substrate, manufacturing method thereof, and display device

A manufacturing method and display substrate technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as poor undercutting of insulating layers, poor electrical connections, etc., and overcome the problem of poor electrical properties , Improve the effect of product yield

Inactive Publication Date: 2019-09-06
BOE TECH GRP CO LTD +1
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention provides a display substrate, a manufacturing method thereof, and a display device, which are used to solve the problem of poor undercut in via holes in an insulating layer, resulting in poor electrical connection when conductive structures of different layers are electrically connected through the via holes. question

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Display substrate, manufacturing method thereof, and display device
  • Display substrate, manufacturing method thereof, and display device
  • Display substrate, manufacturing method thereof, and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Such as figure 2 As shown, an embodiment of the present invention provides a method for manufacturing a display substrate, including:

[0032] form an insulating layer;

[0033] forming a photoresist on the insulating layer, exposing and developing the photoresist to form a photoresist-retained area and a photoresist-unretained area;

[0034] removing the insulating layer not retained by the photoresist to form a via hole;

[0035] Stripping the remaining photoresist, before stripping the remaining photoresist, the manufacturing method also includes:

[0036] forming a conductive coating film on the photoresist and in the via hole through a coating process;

[0037] The process of stripping the remaining photoresist removes the conductive coating film on the photoresist at the same time to form the pattern of the conductive coating film, and the conductive coating film includes a first part located on the sidewall of the via hole and a The second part at the bottom...

Embodiment 2

[0075] In this embodiment, a display substrate prepared by using the manufacturing method in Embodiment 1 is provided, including:

[0076] an insulating layer having a via hole in the insulating layer;

[0077] A conductive coating, the conductive coating includes a first part located on the sidewall of the via hole and a second part located at the bottom of the via hole, the first part and the second part are integrally formed to form an electrical connection structure , the conductive coating is made through a coating process.

[0078] The above-mentioned display substrate includes an electrical connection structure located in the via hole of the insulating layer. The electrical connection structure is attached to the sidewall and bottom of the via hole, and is made by a coating process, and has good conductivity.

[0079] The conductive structures located on both sides of the insulating layer can be electrically connected through the electrical connection structure in the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of display and discloses a display substrate and a manufacturing method of the display substrate as well as a display device. The manufacturing method comprises the following steps: when forming a through hole in an insulating layer through a photolithographic process, not peeling residual photoresist; forming a conductive plated film on the photoresist and in the through hole through a film plating process; then peeling the photoresist; meanwhile, removing the conductive plated film on the photoresist, so as to form a pattern of the conductive plated film. The conductive plated film can be attached on a whole side wall and the bottom of the through hole through a film plating process, so that a broken layer does not occur and an electric connection structure with a good conducting property can be formed in the through hole. When conductive structures at two sides of the insulating layer are electrically connected through the through hole in the insulating layer, the electric connection structure in the through hole can be reliably connected with the conductive structures; the problem that a electric property is not good, caused by the fact that the through hole is not undercut well, is solved, and the yield of products is improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a display substrate, a manufacturing method thereof, and a display device. Background technique [0002] At present, in the manufacturing process of thin film transistor liquid crystal display devices, after the passivation layer covering the top of the thin film transistor is manufactured, it is necessary to use dry etching technology to form via holes on the passivation layer; A pixel electrode is formed, wherein the pixel electrode is electrically connected to the drain electrode of the thin film transistor through the via hole in the passivation layer. [0003] In the traditional manufacturing process, the material of the passivation layer is usually SiNx, and the passivation layer is divided into three layers: transition layer 11 ′, main body layer 12 ′ and top layer 13 ′. The function of the top layer 13' is a buffer layer for plasma etching, the main function is to make ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L21/77
Inventor 宫奎尹洋植李纪龙董必良
Owner BOE TECH GRP CO LTD