Aluminum heating element with aluminum nitride film, preparation method and heating device
A heating device, aluminum nitride technology, applied in the field of heaters, can solve the problems of reduced mechanical properties and thermal conductivity, inability to significantly improve heat dissipation efficiency, and limited improvement effect, so as to achieve improved heating effect, good thermal conductivity, and improved heat dissipation effect Effect
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Embodiment 1
[0026] This embodiment provides an aluminum heating element with an aluminum nitride film, the structure of which is as follows figure 1 Shown; includes an aluminum substrate 1, the surface of which is covered with an aluminum nitride film 2.
[0027] The thickness of the aluminum nitride film can be set in different specifications according to actual needs, such as 1 μm, 10 μm, 100 μm or 300 μm.
[0028] The density of the aluminum nitride film is at 2.85g / cm 3 ~3.02g / cm 3 range, so as to ensure that the aluminum nitride film can achieve sufficient heat conduction effect.
[0029] In the present invention, the aluminum nitride film is covered on the surface of the aluminum heating element to isolate the contact between the aluminum and the air, thereby preventing the aluminum surface from being oxidized into alumina. After the aluminum substrate is heated, the heat is transferred to the aluminum nitride on the aluminum surface. Aluminum has good thermal conductivity, and c...
Embodiment 2
[0031] Compared with Example 1, the only difference is that a heating wire is arranged inside the aluminum base.
[0032] After heating, the heating wire inside the heating element provided in this embodiment transmits the heat to the aluminum substrate, and then transmits the heat to the aluminum nitride film, so that the heat can be quickly and efficiently transmitted to the environment.
Embodiment 3
[0034] This embodiment provides a method for preparing an aluminum heating element with an aluminum nitride film, comprising the following steps: connecting one pole of the pulse power supply to the aluminum substrate, and connecting the other pole of the pulse power supply to an aluminum tool electrode ; Start the pulse power supply, and move the tool electrode above the aluminum substrate in a nitrogen atmosphere, thereby forming an aluminum nitride film on the surface of the aluminum substrate.
[0035] During the preparation process, the distance between the tool electrode and the aluminum substrate was 0.2mm; the voltage of the pulse power supply was 450V, and the current was 11A; the pulse width of the pulse power supply was 100μs, and the pulse interval was 275μs.
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