Non-destructive screening method and device for schottky diode anti-irradiation ability

Abstract

The invention provides a lossless screening method and device of irradiation resistance of a Schottky diode. The method includes: acquiring the reverse leakage currents, reverse breakdown voltage and noise voltage power spectrum amplitude, serving as random subsamples, of the Schottky diode before irradiation; acquiring the reverse leakage currents, serving as the random subsample, of the Schottky diode after the irradiation; calculating a reverse leakage current degradation amount before and after the irradiation; using the reverse breakdown voltage and the noise voltage power spectrum amplitude as the information parameters and using the reverse leakage current degradation amount as the irradiation performance parameter to build a multiple linear regression equation, and estimating a coefficient vector in the linear regression equation; building a lossless screening regression predicting equation; using the lossless screening regression predicting equation to predict the irradiation resistance of the single device. By the method, accurate and efficient testing and screening of component irradiation resistance can be performed.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a method for non-destructive screening of Schottky diodes against radiation. Background technique [0002] At present, Schottky diodes are widely used in military, aerospace and other fields. Because they work in high-irradiation environments in space, they are bound to be subjected to various rays (such as α, β, and medium) from cosmic rays, solar plasma gas, and Van Allen belts. Irradiation of electrons, high-energy particles, γ-rays, χ-rays, etc.) and nuclear radiation will form interface trap charges at the interface between metal and semiconductor materials, resulting in radiation damage, resulting in degradation or even failure of device performance, which in turn affects circuit boards, sub- system, in severe cases, it can cause the failure of a spacecraft costing hundreds of millions of dollars. ; Therefore, in order to ensure that the Schottky diodes entering s...

AI Technical Summary

Problems solved by technology

This method has two limitations: one is the high cost and long time of detection; the other is that the detection itself is often destructive, that is, the devices that are finally screened out have been irradiated, so that the life of the device itself has been reduced, and due to the use of The method of high dose rate test to equivalent space low dose rate irradiation environment, the simulation results are often inaccurate

The technical difficulty of the multiple regression analysis method in the prior art is how to select sensitive information parameters, which can not only realize the prediction of the anti-irradiation ability before irradiation, but also be closely related to the microscopic damage of the device. The forward voltage drop and reverse breakdown voltage of the SBD device are used as information parameters, and the degradation of reverse leakage current after irradiation is used as the radiation performance parameter. The prediction of reverse leakage current drift of SBD devices obtained by ignoring noise parameters in this way is not accurate. Accuracy, which ultimately affects the accuracy and reliability of the screening of Schottky diode devices

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