Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Schottky diode

A technology of Schottky diodes and anodes, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of large, reverse bias and low reverse leakage current, etc., to reduce reverse leakage current and positive The effect of reducing the forward conduction voltage drop and reducing the forward conduction resistance

Active Publication Date: 2017-05-31
SHENZHEN HUAKE SEMICON
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a Schottky diode to improve the problems of low reverse bias voltage and large reverse leakage current

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Schottky diode
  • Schottky diode
  • Schottky diode

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0025] Such as figure 1 as well as figure 2 As shown, a Schottky diode includes: a semiconductor material 100, a trench 200 separating the semiconductor material 100 into an anode region 110 and a cathode region 120, and an anode metal layer in contact with the semiconductor material 100 on the anode region 110 300, the cathode metal layer 400 in contact with the semiconductor material 100 on the cathode region 120, the trench 200 is in a ring shape, the part of the trench 200 close to the cathode region 120 is filled with an insulating medium 500, and the trench 200 A gate structure 600 is formed near the anode region 110, the gate structure 600 is composed of a first gate insulating layer 610 formed on the inner wall of the trench 200 and conductive polysilicon 620 filled in the trench, the conductive polysilicon 620 and the The anode metal layer 300 is electrically connected.

[0026] Specifically, the semiconductor material 100 may be silicon, silicon carbide, silicon g...

no. 2 example

[0032] Such as image 3 As shown, the technical solution of this embodiment is basically the same as that of the first embodiment, the difference is that the anode metal layer 300 is in contact with the conductive polysilicon 620 to realize electrical connection, which can increase the Schottky contact area to a certain extent and reduce the Small forward conduction voltage drop, preferably, an insulating region 700 is formed at the corner formed by the anode metal layer 300 and the groove 200, so as to avoid the top corner formed by the anode metal layer 300 and the groove 200 under reverse voltage. The corner directly contacts the anode metal layer 300 to form a tip discharge and cause reverse leakage.

no. 3 example

[0034] Such as Figure 4 As shown, the technical solution of this embodiment is basically the same as that of the first embodiment, the difference is that the conductive polysilicon 620 fills the groove 200, and the height exceeds the surface of the groove opening, and is biased towards the anode region at the groove opening One side of 110 expands outwards, so that the width of the conductive polysilicon 620 outside the trench 200 is greater than the width of the conductive polysilicon 620 inside the trench 200, and insulating spacers 800 are formed on both sides of the conductive polysilicon 620 outside the trench 200, and the trench The second gate insulating layer 630 is formed under the conductive polysilicon 620 outside 200. In this embodiment, the gate structure 600 is extended to the side of the anode region 110, so that under the reverse voltage, the gate structure 600 realizes the semiconductor material from two directions. The depletion of 100 further enhances the r...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a Schottky diode. The Schottky diode comprises a semiconductor material, a groove dividing the semiconductor material into an anode zone and a cathode zone, an anode metal layer contacted with the semiconductor material in the anode zone and a cathode metal layer contacted with the semiconductor material in the cathode zone, wherein the groove is annular, the part, close to the cathode zone, in the groove is filled with an insulating medium, one side, close to the anode zone, in the groove forms a gate structure, the gate structure consists of a first gate insulation layer formed by the inner wall of the groove and conductive polycrystalline silicon arranged in the groove, and the conductive polycrystalline silicon is electrically connected with the anode metal layer. The Schottky diode effectively solves the problems of lower reverse bias and larger reverse leakage current.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a Schottky diode. [0002] technical background [0003] A Schottky diode is a semiconductor element that connects a semiconductor layer and a metal layer through a Schottky junction, and utilizes a Schottky barrier to rectify. Schottky diodes can work faster than ordinary PN junction diodes, and have the characteristics of small forward voltage drop. They are mostly used as high-frequency, low-voltage, high-current rectifier diodes, freewheeling diodes, and protection diodes. They are also useful in microwave Used as rectifier diodes and small-signal detector diodes in communications and other circuits, it is more common in communication power supplies, frequency converters, etc. [0004] However, the biggest disadvantage of Schottky diodes is their low reverse bias voltage and large reverse leakage current. For Schottky diodes made of silicon and metal, their reverse bia...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872
Inventor 李风浪
Owner SHENZHEN HUAKE SEMICON
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com