6results about How to "Suppress breakdown" patented technology

The invention discloses a barium strontium titanate-based high-entropy energy storage ceramic with a core-shell structure, the barium strontium titanate-based high-entropy energy storage ceramic comprises SiO2 serving as a shell part and high-entropy ceramic powder serving as a core part, and the high-entropy ceramic powder comprises barium strontium titanate serving as a main phase and sodium potassium bismuth titanate serving as a high-entropy doping phase. The invention also discloses a preparation method of the barium strontium titanate-based high-entropy energy storage ceramic with the core-shell structure, which comprises the following steps: mixing and dissolving a carbonate raw material of a main phase and carbonate or oxide of a high-entropy doping phase, and stirring to form gel; removing organic components in the gel; calcining to form a perovskite phase to obtain high-entropy ceramic powder; sequentially dispersing in an acidic activator, a weakly acidic buffer agent and a weakly alkaline surfactant, adding a silicon source precursor, and heating to form a coating phase SiO2; and after sintering, annealing to obtain a final product. According to the barium strontium titanate-based high-entropy energy storage ceramic with the core-shell structure, the polarization intensity and the breakdown field strength of the ceramic can be improved at the same time.

The utility model relates to electrician technical field, and specifically disclose a kind of extra-high voltage isolating switch shield of asymmetric layered structure, pass through shielding device design, to reach the effect of equipment closure, accurate control asymmetric electric field, solve the problem of "local electric field concentration", give consideration to "high insulation" and "partial discharge protection", adapt complex insulation scene, strengthen "mechanical performance adaptability", cope with asymmetric load, optimize "environmental tolerance", solve the problem of "local corrosion or wear", reduce "corona loss" and "temperature rise risk", adapt extra-high voltage energy-saving demand, first annular frame and second annular frame are used to guide component rotation, optimize electric field distribution, inhibit corona and insulation breakdown, isolate external pollutants, protect key components, resist external force impact, maintain structural stability, optimize current path, reduce local overheating.

Provided is a power amplifier capable of suppressing breakdown of a transistor even when the amplitude of a high-frequency signal is large. A power amplifier having multiple stages of amplification units including transistors whose emitters are grounded, the power amplifier including: a first amplification unit having a first transistor that amplifies an input high-frequency signal; a second amplification unit having a second transistor that amplifies the output of the first amplification unit; a voltage detection circuit provided with at least an impedance element and provided between the first transistor and the second transistor; and a protection circuit that reduces a base bias current supplied to at least one of the first transistor and the second transistor on the basis of an output of a voltage detection circuit including the impedance element.

The high-frequency dielectric heating adhesive (1A) of the present invention contains a thermoplastic resin (A) and a dielectric filler (B). When the cross-section of the high-frequency dielectric heating adhesive (1A) cut along the thickness direction is observed by scanning electron microscopy, the relationship between the nearest centroid distance Dg of the dielectric filler (B) and the particle size Dn of the dielectric filler (B) satisfies the following mathematical formula (F1): 1.55≤Dg / Dn≤1.85 ···(F1).

The utility model relates to the technical field of power electronic silicon stack devices, in particular to a silicon carbide patch type ceramic diode. Comprising a ceramic shell, a silicon carbide chip, a lead-in electrode, a lead-out electrode, a copper-clad substrate and a bonding copper sheet, the silicon carbide chips are fixedly connected to the copper-clad substrates, the multiple copper-clad substrates are distributed in a matrix mode, the ceramic shell is of a rectangular box structure with an opening, grooves corresponding to the copper-clad substrates are formed in the inner bottom face of the ceramic shell, and the copper-clad substrates are embedded into the grooves. The leading-in electrode and the leading-out electrode are fixedly connected to the two sides of the copper-clad substrate matrix and connected with the copper-clad substrate and the silicon carbide chip through the bonding copper sheets. And the copper-clad substrates are connected through bonding copper sheets. The heat conductivity can be improved, the packaging process is simplified, and the overall performance is improved.

The present invention provides an anodized titanium material with improved voltage resistance. The anodized titanium material comprises: a titanium base material and an anodized titanium layer provided on the surface of the titanium base material, the anodized titanium layer comprising a porous first anodized titanium layer, the anodized titanium material having a voltage resistance of 500V or more at 25°C, a Vickers hardness of 200 or more, a film thickness of 20 μm or more and less than 80 μm, an arithmetic mean roughness Ra of the surface of less than 1.6 μm, a maximum height roughness Rz of the surface of less than 6.3 μm, and no pore cross-section having a shape that can contain a circle with a diameter of 0.5 μm or more is observed in any of the cross-section perpendicular to the thickness direction and the surface of the first anodized titanium layer.