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3results about How to "Suppress breakdown" patented technology

An ultra-high voltage isolating switch shielding cover with asymmetric layered structure

ActiveCN224746064Uto achieve closureSolving the problem of local electric field concentration
The utility model relates to electrician technical field, and specifically disclose a kind of extra-high voltage isolating switch shield of asymmetric layered structure, pass through shielding device design, to reach the effect of equipment closure, accurate control asymmetric electric field, solve the problem of "local electric field concentration", give consideration to "high insulation" and "partial discharge protection", adapt complex insulation scene, strengthen "mechanical performance adaptability", cope with asymmetric load, optimize "environmental tolerance", solve the problem of "local corrosion or wear", reduce "corona loss" and "temperature rise risk", adapt extra-high voltage energy-saving demand, first annular frame and second annular frame are used to guide component rotation, optimize electric field distribution, inhibit corona and insulation breakdown, isolate external pollutants, protect key components, resist external force impact, maintain structural stability, optimize current path, reduce local overheating.
Owner:YANG ZHOU MEIHUA ELECTRIC CO LTD

High-frequency dielectric heating adhesive

The high-frequency dielectric heating adhesive (1A) of the present invention contains a thermoplastic resin (A) and a dielectric filler (B). When the cross-section of the high-frequency dielectric heating adhesive (1A) cut along the thickness direction is observed by scanning electron microscopy, the relationship between the nearest centroid distance Dg of the dielectric filler (B) and the particle size Dn of the dielectric filler (B) satisfies the following mathematical formula (F1): 1.55≤Dg / Dn≤1.85 ···(F1).
Owner:LINTEC CORP

Silicon carbide patch type ceramic diode

ActiveCN224192415UImprove connection strengthShorten the heat conduction pathThermal conductivityCopper substrate
The utility model relates to the technical field of power electronic silicon stack devices, in particular to a silicon carbide patch type ceramic diode. Comprising a ceramic shell, a silicon carbide chip, a lead-in electrode, a lead-out electrode, a copper-clad substrate and a bonding copper sheet, the silicon carbide chips are fixedly connected to the copper-clad substrates, the multiple copper-clad substrates are distributed in a matrix mode, the ceramic shell is of a rectangular box structure with an opening, grooves corresponding to the copper-clad substrates are formed in the inner bottom face of the ceramic shell, and the copper-clad substrates are embedded into the grooves. The leading-in electrode and the leading-out electrode are fixedly connected to the two sides of the copper-clad substrate matrix and connected with the copper-clad substrate and the silicon carbide chip through the bonding copper sheets. And the copper-clad substrates are connected through bonding copper sheets. The heat conductivity can be improved, the packaging process is simplified, and the overall performance is improved.
Owner:ANSHAN LEADSUN ELECTRONICS