32results about How to "Suppress breakdown" patented technology

In a shielding case, a condenser lens condenses a laser beam output by a laser oscillator to inject the laser beam into an entrance end face of an optical fiber disposed posterior to a focusing point of the laser beam. Ventilation of an ambient gas in the shielding case is carried out by ventilating means, and the ambient gas bringing about ionization in the vicinity of the focusing point of the laser beam is eliminated, thereby preventing the outbreak of air breakdown.

Disclosed is a formation method for a semiconductor structure. The formation method comprises the steps of providing a substrate and a dielectric layer which is positioned on the surface of the substrate, wherein a bottom layer metal layer is formed in the substrate; etching the dielectric layer to form an opening which runs through the dielectric layer, wherein the surface of the bottom layer metal layer is exposed out of the bottom of the opening; performing etching post-processing on the opening by adopting an H<2>-containing gas; forming a silicon layer on the surface of the side wall of the opening after the etching post-processing is carried out; after the silicon layer is formed, performing wet cleaning processing on the opening; and forming a conductive layer, wherein the opening is filled with the conductive layer. By adoption of the formation method, when the impurities in the opening are removed, corrosion to the dielectric layer on the side wall of the opening is avoided in the process of the wet cleaning processing, so that the breakdown voltage is increased; the time dependent dielectric breakdown problem is restrained; and the reliability and the electrical performance of the semiconductor structure are improved.

A semiconductor device has an element portion (1) and an outer peripheral portion (2) surrounding the element portion (1), a deep layer (23) deeper than a base layer (12) is formed on the outer peripheral portion (2), and the deep layer ( The position closest to the element part (1) side in 23) is the boundary position (K), and the boundary position (K) is set to be the most outer peripheral part (2) in the emitter region (16) capable of injecting the first carriers. ) The distance between the positions on the side is the first distance (L1), and the distance between the boundary position (K) and the end position of the semiconductor substrate (10) in the collector layer (21) in the plane direction is For the second distance (L2), the first distance (L1) and the second distance (L2) are adjusted so that the outer peripheral portion (2) is ) carrier density decreases.

The invention discloses an arc-extinguishing device of a control and protection switch. The arc-extinguishing device comprises a pedestal and a plurality of arc-extinguishing chamber groups arranged inside the pedestal. Air outlets communicated with each arc-extinguishing chamber group are formed in the two sides of the pedestal. The arc-extinguishing chambers are formed by left arc-extinguishing chambers and right arc-extinguishing chambers; contact bridges are arranged between the left arc-extinguishing chambers and the right arc-extinguishing chambers; arc pins are arranged at the two ends of the contact bridges; and one end of each contact bridge extends into one left arc-extinguishing chamber and the other end extends into one right arc-extinguishing chamber. The arc-extinguishing device is characterized in that art striking plates and a plurality of arc-extinguishing grid plates are arranged in all left arc-extinguishing chambers and the right arc-extinguishing chambers; first buffer chambers for communication of the air outlets and the left arc-extinguishing chambers are arranged at the left sides of the left arc-extinguishing chambers; and second buffer chambers for communication of the air outlets and the right arc-extinguishing chambers are arranged at the right sides of the right arc-extinguishing chambers. Metallic separation boards are arranged in the first buffer chambers and the second buffer chambers; and a plurality of through holes are formed in the metallic separation boards. According to the invention, frequent arc extending can be avoided; the arc can be weakened or eliminated; burning of the arc pins is prevented; and the arc striking effect of the arc-extinguishing grid plates is good.

The silicon carbide semiconductor device includes a transistor region, a diode region, a gate wiring region, and a gate pad region. The gate pad region and the gate wiring region are respectively arranged so as to be sandwiched by a diode region adjacent to the transistor region and a diode region adjacent to the termination region, and gate electrodes of the gate pad region and the gate wiring region are formed in the region. On the insulating film, the insulating film is formed on the epitaxial layer. This makes it possible to suppress dielectric breakdown of the insulating film in the gate region during switching and avalanche breakdown without degrading the quality of the gate insulating film.

The invention relates to an all-solid aluminum electrolytic capacitor and a preparation method thereof. In the aluminum electrolytic capacitor, the electrolytic paper in a traditional capacitor is replaced by a solid nanocomposite film containing anode aluminum foil repair ions, and the anode aluminum foil with siloxy-coupling on the surface is used instead. Traditional anodized aluminum foil. Its preparation route includes preparing nanocomposite membranes by in-situ polymerization and introducing anode foil repair ions, performing siloxyl coupling on the surface of anode aluminum foils, and then combining graphite layers and conductive silver pastes to assemble into all-solid aluminum electrolytic capacitors. Compared with the prior art, the all-solid aluminum electrolytic capacitor provided by the present invention solves the problems of large leakage current, liquid leakage, poor temperature characteristics and short service life under extreme temperatures of the traditional aluminum electrolytic capacitor prepared with liquid organic electrolyte, and at the same time It also solves the problems of low flashover voltage and poor voltage resistance of solid aluminum electrolytic capacitors newly developed in recent years, and greatly improves the overall comprehensive performance of aluminum electrolytic capacitors.

The invention provides a semiconductor structure and a forming method thereof, wherein, the method comprises the following steps: a substrate; a first well region, a second well region, a third well region and a fourth well region located between the third well region and the first well region which are located in the substrate, the third well region and the second well region being the same in conductivity type of doped ions and the fourth well region and the third well region being opposite in conductivity type of doped ions; a device structure located on the third well region; a first dopedregion and a second doped region located in the first well region, the first doped region and the second doped region being separate, the conductivity type of the doped ions in the first doped regionand the second doped region being opposite to that of the first well region, the first doped region being electrically connected to the device structure; a third doped region located in the second well region, the third doped region being electrically connected to the second doped region. The first doped region, the first well region and the second doped region form a transistor, which can improve the performance of the semiconductor structure.