The utility model relates to the technical field of power electronic
silicon stack devices, in particular to a
silicon carbide patch type ceramic diode. Comprising a
ceramic shell, a
silicon carbide chip, a lead-in
electrode, a lead-out
electrode, a
copper-clad substrate and a bonding
copper sheet, the
silicon carbide chips are fixedly connected to the
copper-clad substrates, the multiple copper-clad substrates are distributed in a matrix mode, the
ceramic shell is of a rectangular box structure with an opening, grooves corresponding to the copper-clad substrates are formed in the inner bottom face of the ceramic shell, and the copper-clad substrates are embedded into the grooves. The leading-in
electrode and the leading-out electrode are fixedly connected to the two sides of the copper-clad substrate matrix and connected with the copper-clad substrate and the
silicon carbide chip through the bonding copper sheets. And the copper-clad substrates are connected through bonding copper sheets. The heat
conductivity can be improved, the packaging process is simplified, and the overall performance is improved.