Junction barrier Schottky diode with a floating field ring terminal structure and a preparation method thereof

A junction barrier Schottky and terminal structure technology, applied in the direction of diodes, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of low device breakdown voltage, large reverse leakage current, temperature sensitivity, etc. Reduce the effect, avoid electric field concentration, and improve the effect of reverse breakdown characteristics
CN110364575AInactive Publication Date: 2019-10-22CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
Publication Date
2019-10-22
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a junction barrier Schottky diode with a floating field ring terminal structure and a preparation method thereof, and belongs to the technical field of semiconductors. The diodecomprises a ohmic contact metal cathode, a substrate, a first epitaxial layer, a second epitaxial layer, a comb-shaped p region, a Schottky contact metal anode and an insulating layer from the bottomup, wherein the comb-shaped p region includes a plurality of PN junction p regions arranged at intervals and a plurality of floating field rings arranged at intervals on two sides of the outer side PN junction p regions. The invention further provides a preparation method of the junction barrier Schottky diode with the floating field ring terminal structure. The diode adjusts the electric field distribution through the comb-shaped PN junction structure, avoids the concentration of the electric field, disperses the electric field concentrated at the edge of the P-type region among a pluralityof field rings and reduces the maximum value of the electric field. In addition, the appropriate field ring width and gap are selected, and the electric field concentrated at the outmost field ring can be dispersed among the field rings, thereby avoiding the device breakdown caused by the excessively high local electric field.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductors, and in particular relates to a junction barrier Schottky diode with a floating field ring terminal structure and a preparation method thereof. Background technique

[0002] In recent years, due to the low turn-on voltage drop and extremely short reverse recovery time of Schottky Barrier Diodes (SBDs), the improvement of circuit system efficiency has attracted great attention and has been widely used. SBD has three outstanding features: (1) The turn-on voltage and conduction voltage drop of SBD are smaller than that of PIN diodes, which can effectively reduce the power loss in the circuit; (2) SBD has a lower junction capacitance, and its operating frequency is as high as 100GHz (3) Since there is no injection of minority carriers, the switching speed of SBD is faster, and its own reverse recovery time is only the charging and discharging time of the Schottky barrier capacitance. The tradi...

Claims

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