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Junction barrier Schottky diode with a floating field ring terminal structure and a preparation method thereof

A junction barrier Schottky and terminal structure technology, applied in the direction of diodes, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of low device breakdown voltage, large reverse leakage current, temperature sensitivity, etc. Reduce the effect, avoid electric field concentration, and improve the effect of reverse breakdown characteristics

Inactive Publication Date: 2019-10-22
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

The traditional Schottky diode also has the following defects: (1) When the reverse blocking capability is close to 200V, the forward voltage drop V of the Schottky rectifier F will be close to the forward voltage drop of the PIN rectifier, so the reverse blocking voltage of the traditional Schottky barrier diode is generally lower than 200V, making it less efficient in the application
(2) The traditional Schottky diode has a large reverse leakage current and is sensitive to temperature. The junction temperature of the traditional Schottky diode is between 125°C and 175°C
[0004] Although the existing gallium nitride JBS device effectively reduces the leakage current and enhances the reverse breakdown characteristics through the junction barrier, the breakdown voltage of the device is generally lower than 1000V

Method used

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  • Junction barrier Schottky diode with a floating field ring terminal structure and a preparation method thereof
  • Junction barrier Schottky diode with a floating field ring terminal structure and a preparation method thereof
  • Junction barrier Schottky diode with a floating field ring terminal structure and a preparation method thereof

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preparation example Construction

[0042] The present invention also provides a method for preparing a junction barrier Schottky diode with a floating field ring termination structure, which specifically includes:

[0043] Step 1: Deposit the first epitaxial layer on the substrate, and deposit the second epitaxial layer on the first epitaxial layer; the deposition method is not particularly limited, and the organic chemical vapor deposition method well known in the art can be used. Before the substrate is used, it is preferable to clean it with acetone methanol and deionized water to remove organic contamination on the substrate;

[0044] Step 2: Perform a photolithography process on the second epitaxial layer to form an ion implantation region, and then prepare a P-type region barrier layer. The thickness of the P-type region barrier layer is preferably 2-4 μm, and then ion implant Mg + , in a high-pressure nitrogen atmosphere, magnesium ions are activated through repeated annealing, and the barrier layer is r...

Embodiment 1

[0050] Step 1: If figure 1 , a schematic diagram of the growth of GaN-based JBS materials, the preparation process includes: prepare a double-sided polished n-type highly doped self-supporting GaN substrate 2, and use acetone, methanol and deionized water to ultrasonically clean for 10 minutes to remove organic contamination on GaN ; On the n-type highly doped free-standing GaN substrate 2, the n of the first epitaxial layer 2 μm is deposited + type GaN3, the carrier concentration is about 1.5x10 18 cm -3 , the second epitaxial layer is 23μm n-type GaN4, the carrier concentration is about 8x10 15 cm -3 ;Such as figure 1 As shown, specifically:

[0051] 1) Use HCl:H 2 Soak in O (1:5 volume ratio) dilute hydrochloric acid for 2 minutes to remove the surface oxide layer on the GaN surface due to long-term placement in the air, use deionized water to remove the residual acid on the surface, and use N 2 Blow dry and quickly put into the cavity of MOCVD;

[0052] 2) Vacuumiz...

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Abstract

The invention provides a junction barrier Schottky diode with a floating field ring terminal structure and a preparation method thereof, and belongs to the technical field of semiconductors. The diodecomprises a ohmic contact metal cathode, a substrate, a first epitaxial layer, a second epitaxial layer, a comb-shaped p region, a Schottky contact metal anode and an insulating layer from the bottomup, wherein the comb-shaped p region includes a plurality of PN junction p regions arranged at intervals and a plurality of floating field rings arranged at intervals on two sides of the outer side PN junction p regions. The invention further provides a preparation method of the junction barrier Schottky diode with the floating field ring terminal structure. The diode adjusts the electric field distribution through the comb-shaped PN junction structure, avoids the concentration of the electric field, disperses the electric field concentrated at the edge of the P-type region among a pluralityof field rings and reduces the maximum value of the electric field. In addition, the appropriate field ring width and gap are selected, and the electric field concentrated at the outmost field ring can be dispersed among the field rings, thereby avoiding the device breakdown caused by the excessively high local electric field.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a junction barrier Schottky diode with a floating field ring terminal structure and a preparation method thereof. Background technique [0002] In recent years, due to the low turn-on voltage drop and extremely short reverse recovery time of Schottky Barrier Diodes (SBDs), the improvement of circuit system efficiency has attracted great attention and has been widely used. SBD has three outstanding features: (1) The turn-on voltage and conduction voltage drop of SBD are smaller than that of PIN diodes, which can effectively reduce the power loss in the circuit; (2) SBD has a lower junction capacitance, and its operating frequency is as high as 100GHz (3) Since there is no injection of minority carriers, the switching speed of SBD is faster, and its own reverse recovery time is only the charging and discharging time of the Schottky barrier capacitance. The tradi...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L29/06H01L21/329
CPCH01L29/0615H01L29/0692H01L29/66212H01L29/872
Inventor 黎大兵刘新科孙晓娟贾玉萍石芝铭
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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