Graphene-assisted GaN rectifier and preparation method thereof

Abstract

The invention discloses a graphene-assisted GaN rectifier and a preparation method thereof. The preparation method comprises the steps of transferring graphene on an epitaxial wafer for preparing a primary electrode; carrying out photoetching development on the epitaxial wafer subjected to graphene transfer; evaporating a metal layer on the epitaxial wafer subjected to photoetching development; removing glue on the epitaxial wafer subjected to metal layer evaporation; removing redundant graphene on the epitaxial wafer subjected to glue removal; partially evaporating Schottky metal at a Schottky electrode on the epitaxial wafer subjected to redundant graphene removal; depositing a patterned passivation layer on the epitaxial wafer subjected to Schottky metal evaporation; and depositing a top metal layer on the patterned passivation layer. The obtained graphene-assisted GaN rectifier can reduce the high-frequency working thermal breakdown frequency of a GaN rectifier and effectively enhance the electrode current expansion capability of the GaN rectifier; and a graphene introduction method can be widely applied to the preparation of various types of GaN rectifier structures or III nitride power devices taking AlGaN / GaN heterojunctions as structure foundations.

Description

technical field [0001] The invention relates to the field of Group III nitride power devices, in particular to a graphene-assisted GaN rectifier and a preparation method thereof. Background technique [0002] As a high-speed switching electronic component, rectifiers have extensive and irreplaceable applications in civil or military power systems that require AC-DC conversion, such as transportation, wireless charging, electrochemical industry, and future satellite energy transmission systems. Almost all power sources in the market ecosystem including electrical appliances are converted from AC power. In practical applications, the AC power input transmitted by the power system is first converted into DC power by a rectifier circuit, and then boosted to a stable level. The downstream DC-DC The converter converts the voltage to an isolated standard voltage. Therefore, the energy conversion efficiency of the rectifier in the AC-DC conversion process has become a non-negligibl...

AI Technical Summary

Problems solved by technology

However, the preparation and development of GaN rectifiers are still in their infancy. How to achieve higher power density, high-frequency applications, optoelectronic integration and solve the failure of high-frequency devices are still erected on the road to the commercialization of GaN rectifiers.

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