The invention belongs to the technical field of
tantalum capacitors, and particularly relates to a method for reducing high-temperature leakage current of a
tantalum capacitor, which comprises the following steps of: 1) passivating a microporous
metal plate: passivating the microporous
metal plate in concentrated
nitric acid, cooling to
room temperature and then taking out the microporous
metal plate; 2)
corrosion of the microporous metal plate: soaking the passivated microporous metal plate in a
sodium hydroxide solution, and washing with water; (3) forming: taking the sintered
tantalum core as an
anode, taking the microporous metal plate treated in the step (2) as a
cathode, adding a forming liquid into a forming tank, boosting to a capacity testing
voltage at a
constant current density of 0.01-0.06 A / g, and then keeping the
voltage constant; (4) post-treatment; after the tantalum
anode manufactured by the method is subjected to traditional
coating, assembling and aging processes, high-temperature and low-leakage-current
tantalum capacitor production is realized, and the product percent of pass is high. The microporous metal plate used in the invention has a large specific surface area, and has the effects of low
electron density per unit area and uniform
electric field distribution in the forming process of
tantalum capacitor manufacturing.