4 results about "Constant current density" patented technology

This invention relates to the field of battery separator materials technology, specifically to MXene-functionalized aramid paper-based battery separators, their preparation methods, and applications. Meta-aramid paper is prepared by wet papermaking using short-cut meta-aramid fibers and precipitated fibers. MXene nanosheets are prepared by hydrofluoric acid etching. Using the meta-aramid paper as a substrate, a functional coating is constructed on the surface of the aramid paper by loading a mixture of para-aramid nanofibers and MXene through a vacuum-assisted filtration-layer-by-layer self-assembly method. The resulting functionalized separator is obtained through protonation reduction. The separator, with its three-dimensional porous protective layer constructed from para-aramid nanofibers and MXene, combines physical barrier and chemical bonding, effectively inhibiting polysulfide shuttle. Furthermore, the highly active sites of MXene can activate inert sulfur-containing substances, improving sulfur utilization. When used in assembling lithium-sulfur batteries, the separator achieves an initial discharge capacity of 1244 mAh·g at a constant current density. ‑1 The capacity retention rate is 82% after 200 cycles.

The application relates to the technical field of ammonium oxidation, and discloses an anode material for ammonium oxidation under a low-concentration chloride ion condition and a preparation method thereof.The anode material takes manganese dioxide as a carrier and is loaded with monatomic silver, and the loading amount of the monatomic silver is less than 0.1 wt%.In the preparation process, first, constant current density electrodeposition is carried out to prepare a MnO2 / platinum-coated titanium mesh; then, a wet chemical immersion method is used to load Ag on the MnO2 substrate; finally, high-temperature air atmosphere calcination is carried out to prepare a monatomic Ag / MnO2 anode material.The application utilizes the acid resistance of MnO2 itself and the strong metal carrier interaction between metal Ag and MnO2 to realize stable and continuous electrolysis operation; and Ag and MnO2 realize the enrichment of low-concentration chloride ions at the anode interface through chemical affinity and physical adsorption, thereby realizing the efficient generation of active chlorine under the condition of low-concentration chloride ions.

A de-powdered waste battery electrode sheet and its preparation method are disclosed. The preparation method includes: providing a cathode plate, an anode plate, and an electrolyte; the cathode plate comprises a waste battery electrode sheet, the anode plate comprises boron-doped diamond, and the electrolyte comprises a supporting electrolyte, a halide salt, and a pH buffer; immersing the cathode plate and anode plate in the electrolyte and electrically connecting them to carry out an electrochemical reaction; the electrode spacing between the cathode plate and anode plate is 1 mm-10 mm, and the constant current density is 20 mA / cm². 2 -80 mA / cm 2 The de-powdered waste battery electrode sheets are collected from the cathode plate after the electrochemical reaction. The preparation method of this application enables effective separation between the original active material and the current collector in the obtained de-powdered waste battery electrode sheets, with less residual binder on the surface of the current collector and good mechanical properties maintained.

The application relates to a semiconductor electrochemical gold etching solution and an etching method thereof. The electrochemical gold etching solution is composed of inorganic acid, metal salt, halide, surfactant, decontaminant, defoaming agent and the like, semiconductor wafer anodes and cathodes are immersed in the electrochemical gold etching solution, and the electrochemical single-element gold etching is carried out under a constant current density. By adjusting the composition, pH value, content of the electrochemical gold etching solution and etching conditions, the excellent effects of fast etching rate of the single-element gold on the semiconductor wafer, controllable etching thickness, uniform surface and the like are realized.