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Method for manufacturing high quality aluminum oxide photon crystal

A technology of photonic crystals and alumina, which is applied in the field of electrochemistry, can solve the problems that periodic changes in hole density cannot obtain a one-dimensional multilayer film structure, and achieve the effects of wide application prospects, convenient operation, and low production cost

Inactive Publication Date: 2008-07-16
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, during the growth process of alumina templates, alumina templates with periodic changes in average refractive index, that is, one-dimensional alumina photonic crystals, can be obtained by periodically adjusting the anodization voltage. However, since the anodization voltage is not directly related to the hole density , so periodically changing the voltage cannot obtain a periodic mutation of the hole density and cannot obtain a one-dimensional multilayer film structure with a relatively deep optical bandgap

Method used

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  • Method for manufacturing high quality aluminum oxide photon crystal

Examples

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Effect test

Embodiment 1

[0024] At an ambient temperature of 22 degrees Celsius, follow the steps below:

[0025] (1) Cut an aluminum sheet with a thickness of 0.2mm into a shape of 2.5cm×3cm, first degrease the aluminum sheet with acetone, and then wash it with 0.1mol / L dilute sulfuric acid and 0.1mol / L dilute sodium hydroxide solution The aluminum sheet. In the electrolyte solution of 80wt% absolute alcohol and 20wt% perchloric acid mixed solution, the treated aluminum sheet was used as anode, and the platinum sheet was used as cathode, and was electrochemically polished with 16v voltage for 3 minutes.

[0026] (2) Use 0.3mol / L sulfuric acid as the electrolyte, use the polished aluminum sheet as the anode, and the platinum sheet as the cathode, and anodize the aluminum sheet for 6 hours at a voltage of 20v.

[0027] (3) Use a mixed solution of 6 wt% phosphoric acid and 1.8 wt% chromic acid to dissolve the aluminum oxide film formed on the surface of the aluminum sheet.

[0028] (4) Use 0.3mol / L su...

Embodiment 2

[0031] At an ambient temperature of 22 degrees Celsius, follow the steps below:

[0032] (1) Cut an aluminum sheet with a thickness of 0.2 mm into a shape of 2.5 cm × 3 cm, first degrease the aluminum sheet with acetone, and then wash the aluminum sheet with 0.1 mol / L dilute sulfuric acid and 0.1 mol / L dilute sodium hydroxide solution aluminum sheet. In the electrolyte of 80wt% absolute alcohol and 20wt% perchloric acid mixed solution, the cleaned aluminum sheet was used as the anode, and the platinum sheet was used as the cathode, and was electrochemically polished with a voltage of 16v for 3 minutes.

[0033] (2) Use 0.3mol / L sulfuric acid as the electrolyte, the polished aluminum sheet as the anode, and the platinum sheet as the cathode, and anodize the aluminum sheet for 6 hours at a voltage of 20v.

[0034] (3) Use a mixed solution of 6 wt% phosphoric acid and 1.8 wt% chromic acid to dissolve the aluminum oxide film formed on the surface of the aluminum sheet.

[0035] ...

Embodiment 3

[0038] At an ambient temperature of 22 degrees Celsius, follow the steps below:

[0039] (1) Cut an aluminum sheet with a thickness of 0.2 mm into a shape of 2.5 cm × 3 cm, first degrease the aluminum sheet with acetone, and then wash the aluminum sheet with 0.1 mol / L dilute sulfuric acid and 0.1 mol / L dilute sodium hydroxide solution aluminum sheet. In the electrolyte solution of 80wt% absolute alcohol and 20wt% perchloric acid mixed solution, the treated aluminum sheet was used as anode, and the platinum sheet was used as cathode, and was electrochemically polished with 16v voltage for 3 minutes.

[0040] (2) Use 0.3mol / L sulfuric acid as the electrolyte, the polished aluminum sheet as the anode, and the platinum sheet as the cathode, and anodize the aluminum sheet for 6 hours at a voltage of 20v.

[0041] (3) Use a mixed solution of 6 wt% phosphoric acid and 1.8 wt% chromic acid to dissolve the aluminum oxide film formed on the surface of the aluminum sheet.

[0042] (4) Us...

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Abstract

The invention discloses a preparing method of high quality alumina photonic crystal, and the main steps of the method are as follows: an aluminum sheet, the alumina of which is dissolved by surface treatment, is treated with anodic oxidation by high constant current density first and low constant current density then, and the step is repeated, and high quality alumina photonic crystal can be obtained. As the current density is modulated periodically, the nano structure of alumina formed on the surface of the aluminum sheet changes periodically, thus forming periodical porous structure which has the periodical dielectric structure of alumina and air, therefore, the matter has the property of photonic crystal. The method has the advantages of convenient operation and low production cost, and can produce high quality one-dimensional photonic crystal of large area, and the produced photonic crystal has controllable layer number and controllable depth and position of band gap, and has deeper optical band gap on the same number of photonic crystal layers, therefore the invention has wide application prospect in the field of manufacturing optical devices.

Description

technical field [0001] The invention relates to a method for preparing a high-quality alumina photonic crystal, which belongs to the technical field of electrochemistry. Background technique [0002] The anodized aluminum template is a commonly used nanostructure template, and it can be filled to obtain ordered one-dimensional nanoarrays of various materials conveniently. At present, during the growth process of alumina templates, alumina templates with periodic changes in average refractive index, that is, one-dimensional alumina photonic crystals, can be obtained by periodically adjusting the anodization voltage. However, since the anodization voltage is not directly related to the hole density , so periodically changing the voltage cannot obtain a periodic mutation of the hole density and cannot obtain a one-dimensional multilayer film structure with a relatively deep optical bandgap. Contents of the invention [0003] In order to overcome the deficiencies of the prior...

Claims

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Application Information

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IPC IPC(8): C30B29/20C30B30/02C25D11/04
Inventor 郭东来邹宪武
Owner WUHAN UNIV
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