Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for manufacturing high quality aluminum oxide photon crystal

A photonic crystal, alumina technology, applied in the field of electrochemistry, can solve the problem of periodic sudden change of hole density and cannot obtain a one-dimensional multilayer film structure, etc., and achieves the effects of wide application prospects, convenient operation and low production cost.

Inactive Publication Date: 2009-12-23
WUHAN UNIV
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, during the growth process of alumina templates, alumina templates with periodic changes in average refractive index, that is, one-dimensional alumina photonic crystals, can be obtained by periodically adjusting the anodization voltage. However, since the anodization voltage is not directly related to the hole density , so periodically changing the voltage cannot obtain a periodic mutation of the hole density and cannot obtain a one-dimensional multilayer film structure with a relatively deep optical bandgap

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing high quality aluminum oxide photon crystal
  • Method for manufacturing high quality aluminum oxide photon crystal
  • Method for manufacturing high quality aluminum oxide photon crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] At an ambient temperature of 22 degrees Celsius, follow the steps below:

[0025] (1) Cut an aluminum sheet with a thickness of 0.2mm into a shape of 2.5cm×3cm, first degrease the aluminum sheet with acetone, and then wash it with 0.1mol / L dilute sulfuric acid and 0.1mol / L dilute sodium hydroxide solution The aluminum sheet. In the electrolyte solution of 80wt% absolute alcohol and 20wt% perchloric acid mixed solution, the treated aluminum sheet was used as anode, and the platinum sheet was used as cathode, and was electrochemically polished with 16v voltage for 3 minutes.

[0026] (2) Use 0.3mol / L sulfuric acid as the electrolyte, use the polished aluminum sheet as the anode, and the platinum sheet as the cathode, and anodize the aluminum sheet for 6 hours at a voltage of 20v.

[0027] (3) Use a mixed solution of 6 wt% phosphoric acid and 1.8 wt% chromic acid to dissolve the aluminum oxide film formed on the surface of the aluminum sheet.

[0028] (4) Use 0.3mol / L su...

Embodiment 2

[0031] At an ambient temperature of 22 degrees Celsius, follow the steps below:

[0032] (1) Cut an aluminum sheet with a thickness of 0.2 mm into a shape of 2.5 cm × 3 cm, first degrease the aluminum sheet with acetone, and then wash the aluminum sheet with 0.1 mol / L dilute sulfuric acid and 0.1 mol / L dilute sodium hydroxide solution aluminum sheet. In the electrolyte of 80wt% absolute alcohol and 20wt% perchloric acid mixed solution, the cleaned aluminum sheet was used as the anode, and the platinum sheet was used as the cathode, and was electrochemically polished with a voltage of 16v for 3 minutes.

[0033] (2) Use 0.3mol / L sulfuric acid as the electrolyte, the polished aluminum sheet as the anode, and the platinum sheet as the cathode, and anodize the aluminum sheet for 6 hours at a voltage of 20v.

[0034] (3) Use a mixed solution of 6 wt% phosphoric acid and 1.8 wt% chromic acid to dissolve the aluminum oxide film formed on the surface of the aluminum sheet.

[0035] ...

Embodiment 3

[0038] At an ambient temperature of 22 degrees Celsius, follow the steps below:

[0039] (1) Cut an aluminum sheet with a thickness of 0.2 mm into a shape of 2.5 cm × 3 cm, first degrease the aluminum sheet with acetone, and then wash the aluminum sheet with 0.1 mol / L dilute sulfuric acid and 0.1 mol / L dilute sodium hydroxide solution aluminum sheet. In the electrolyte solution of 80wt% absolute alcohol and 20wt% perchloric acid mixed solution, the treated aluminum sheet was used as anode, and the platinum sheet was used as cathode, and was electrochemically polished with 16v voltage for 3 minutes.

[0040] (2) Use 0.3mol / L sulfuric acid as the electrolyte, the polished aluminum sheet as the anode, and the platinum sheet as the cathode, and anodize the aluminum sheet for 6 hours at a voltage of 20v.

[0041](3) Use a mixed solution of 6 wt% phosphoric acid and 1.8 wt% chromic acid to dissolve the aluminum oxide film formed on the surface of the aluminum sheet.

[0042] (4) U...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing high-quality alumina photonic crystals. The main steps of the method are to anodize the aluminum sheet that has undergone surface treatment and dissolve the alumina, first anodize with a high constant current density and then reduce it to Perform anodic oxidation at a low constant current density and repeat this step repeatedly, so that high-quality alumina photonic crystals can be produced. Due to the periodic modulation of the current density, the alumina nanostructure formed on the surface of the aluminum sheet changes periodically, forming a periodic The hole structure, in which there is a periodic dielectric structure of alumina and air in the network periodic structure, has the properties of a photonic crystal. This method is not only easy to operate, low in production cost, and can produce high-quality one-dimensional photonic crystals in a large area, but also the number of layers of the prepared photonic crystals is controllable, the depth and position of the band gap can be adjusted, and it has a deeper The optical band gap has a wide application prospect in the field of optical device preparation.

Description

technical field [0001] The invention relates to a method for preparing a high-quality alumina photonic crystal, which belongs to the technical field of electrochemistry. Background technique [0002] The anodized aluminum template is a commonly used nanostructure template, and it can be filled to obtain ordered one-dimensional nanoarrays of various materials conveniently. At present, during the growth process of alumina templates, alumina templates with periodic changes in average refractive index, that is, one-dimensional alumina photonic crystals, can be obtained by periodically adjusting the anodization voltage. However, since the anodization voltage is not directly related to the hole density , so periodically changing the voltage cannot obtain a periodic mutation of the hole density and cannot obtain a one-dimensional multilayer film structure with a relatively deep optical bandgap. Contents of the invention [0003] In order to overcome the deficiencies of the prior...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/20C30B30/02C25D11/04
Inventor 郭东来邹宪武
Owner WUHAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com