Perovskite thin film, preparation method thereof and perovskite solar cell
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A solar cell and perovskite technology, applied in the field of solar cells, can solve the problems of insufficient time for perovskite precursors, short solvent volatilization time, and poor control of the state of perovskite precursors, and achieve crystallization time. Long, slow evaporation time, improve performance effect
Active Publication Date: 2017-05-31
PEKING UNIV SHENZHEN GRADUATE SCHOOL
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[0007] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a perovskite thin film and a preparation method thereof and a perovskite solar cell, aiming at solving the problem of the perovskite precursor after the anti-solvent is dripped into the existing method. There is not enough time for crystallization, the time for solvent volatilization is too short, and the state of the perovskite precursor before film formation is not easy to control
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Embodiment 1
[0040] The preparation steps of the perovskite thin film are as follows:
[0041] 1) First, the perovskite precursor solution is spin-coated on the ITO conductive glass; the solvent selected for the perovskite precursor solution is DMF, and a 40nm PEDOT:PSS dense layer is formed on the ITO conductive glass;
[0042] 2), then spin the substrate coated with the perovskite precursor solution, stop the rotation when the perovskite precursor solution is not completely volatilized, and place it for a certain period of time, the time is 0s;
[0043] 3) Re-spin the substrate coated with the perovskite precursor solution, then drop toluene as an anti-solvent, and anneal at 100° C. for 10 minutes to form a perovskite film.
Embodiment 2
[0045] This embodiment is basically consistent with Embodiment 1, the difference is:
[0046] Change the placement time in step 2), and the placement time is controlled to 10s.
Embodiment 3
[0048] This embodiment is basically consistent with Embodiment 1, the difference is:
[0049] Change the placement time in step 2), and the placement time is controlled to 30s.
[0050]The perovskite thin films prepared in the above-mentioned Examples 1, 2 and 3 are used to prepare perovskite solar cells respectively, and the perovskite solar cells made include successively from bottom to top: ITO conductive glass, 40nm PEDOT:PSS Dense layer, 300nm thick CH 3 NH 3 PB 0.85 Cl 0.15 (that is, perovskite film), 30nm thick PCBM (fullerene derivative), 10nm thick PEIE and 90nm thick Ag, the effective area of perovskite solar cells is 0.045cm 2 , the energy conversion efficiency of perovskite solar cells is shown in Table 1 below.
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Abstract
The invention discloses a perovskite thin film, a preparation method thereof and a perovskite solar cell. The method comprises the following steps: firstly spin-coating a perovskite precursor solution on a substrate, wherein the solvent selectively used in the perovskite precursor solution is one or more of DMF, DMSO and gamma-GBL, then rotating the substrate spin-coated with the perovskite precursor solution, stopping rotation when the perovskite precursor solution is not completely volatilized, and placing for a certain period of time; rotating the substrate spin-coated with the perovskite precursor solution again, then dropping an inversion solvent again, annealing for 5 to 15 minutes at the temperature of 80 to 120 DEG C, and thus preparing the perovskite thin film. In the perovskite film-forming process, when the solvent in the perovskite precursor solution is not completely volatilized, the rotation of a spin coater is stopped, and the spin coater stands for a certain period of time, and the film-forming quality of the perovskite thin film is increased by prolonging the film-forming time of the perovskite thin film, so that the device performance of the prepared perovskite solar cell is improved.
Description
technical field [0001] The invention relates to the technical field of solar cells, in particular to a perovskite thin film, a preparation method thereof and a perovskite solar cell. Background technique [0002] At present, the method of preparing a dense perovskite film is usually to use the perovskite precursor solution and keep it rotating. The anti-solvent induces the rapid crystallization of the perovskite precursor to form a dense perovskite film. Although this method can produce dense perovskite films, there are also the following problems when using this method to prepare perovskite films: [0003] (1) The perovskite precursor does not have sufficient time to crystallize before the anti-solvent is dropped; [0004] (2) The time for the solvent to evaporate is too short, and the state of the perovskite precursor before film formation is not easy to control. [0005] The above two factors limit the preparation of perovskite films with large crystal grains by anti-s...
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