Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Low-inductance test device with cylindrical through electrode

A test equipment, cylindrical technology, applied in the field of low-inductance test equipment, can solve the problems of limiting high-speed switching device testing, large parasitic inductance, dynamic parameter deviation, etc., to achieve the effect of reducing parasitic inductance, reducing distance, and improving accuracy

Active Publication Date: 2017-06-13
YANGZHOU GUOYANG ELECTRONICS CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The electrical performance parameters of power semiconductor devices need to be evaluated by professional dynamic and static testing institutions, but the current mature dynamic testing institutions have large parasitic inductance, often around 70nH, which will directly cause large deviations in dynamic parameters and even limit high-speed Testing of switching devices, such as SiC devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low-inductance test device with cylindrical through electrode
  • Low-inductance test device with cylindrical through electrode
  • Low-inductance test device with cylindrical through electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The technical solution of the present invention will be further introduced below in conjunction with the accompanying drawings and specific implementation methods.

[0022] This specific embodiment discloses a low-sensitivity testing device with a cylindrical penetrating electrode, such as figure 1 As shown, it includes a current sensor 1 , a snubber capacitor 2 , a housing electrode 4 and a through electrode 5 . The case electrode 4 is provided on a part of the current sensor 1 . The penetrating electrode 5 passes through the middle of the casing electrode 4 and the current sensor 1 .

[0023] The passing electrode 5 includes a cylindrical passing electrode middle part 53, and passing through the electrode left end part 51 and passing electrode right end part 52 on both sides of the passing electrode middle part 53, as image 3 As shown, the left end portion 51 of the passing electrode and the right end portion 52 of the passing electrode are both flat. The through-...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a low-inductance test device with a cylindrical through electrode. The low-inductance test device comprises a current sensor, a through electrode, a shell electrode and an absorption capacitor. The through electrode passes through the middle of the current sensor. The shell electrode, the through electrode and the current sensor are not in contact. The part, located in the middle of the current sensor, of the through electrode is in a cylindrical shape. One end of the through electrode is used as a port of the test device. The other end of the through electrode is connected with one electrode of the absorption capacitor and the other electrode of the absorption capacitor is connected with the shell electrode. The shell electrode is used as another port of the test device. The part, located in the middle of the current sensor, of the through electrode is in a cylindrical shape so that the distance between the through electrode and the shell electrode can be decreased so as to reduce parasitic inductance and improve test accuracy.

Description

technical field [0001] The invention relates to the field of power electronics, in particular to a low-inductance testing device with cylindrical penetrating electrodes. Background technique [0002] Power electronics technology occupies a very important position in today's rapidly developing industrial field. As a representative of power electronics technology, power semiconductor devices have been widely used in electric vehicles, photovoltaic power generation, wind power generation, industrial frequency conversion and other industries. With the rise of my country's industry, power semiconductor devices have a broader market prospect. [0003] The electrical performance parameters of power semiconductor devices are indicators that application engineers are very concerned about. This indicator will serve as the basis for system electrical design and often plays a vital role in the quality of designed products. The electrical performance parameters of power semiconductor de...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01R31/26
CPCG01R31/2601
Inventor 徐文辉王玉林滕鹤松牛利刚刘凯
Owner YANGZHOU GUOYANG ELECTRONICS CO LTD
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com