A High Order Surface Grating Surface Emitting Semiconductor Laser

Abstract

The invention discloses a high-order surface grating surface-emitting semiconductor laser. The laser comprises a surface metal electrode layer, a ridge waveguide layer, a p-type doped cladding layer, a grating layer, a p-type doped optical confinement layer, a quantum well or quantum dot active area, an n-type doped optical confinement layer and a substrate layer, which are sequentially arranged, wherein a first-order grating is distributed on the grating layer; a high-order surface grating for coupling optical energy resonating along the horizontal direction to the perpendicular direction for output is distributed above the first-order grating in the center of a resonant cavity. The length of the high-order surface grating positioned above the grating layer in the center of the resonant cavity of the laser is (9 to 100) microns. A traveling wave mode in the resonant cavity of the laser is coupled into a radiation mode to realize surface output of laser by the high-order surface grating. The surface output light of the laser is directly coupled with a fiber core of a standard single-mode optical fiber. A segment of central phase shift is introduced into the center of the high-order surface grating, so that the coupling efficiency of the high-order surface grating surface-emitting laser and the standard single-mode optical fiber can exceed 50 percent.

Description

technical field [0001] The invention belongs to the technical field of optical communication devices, and more specifically relates to a high-order surface grating surface-emitting semiconductor laser. Background technique [0002] Semiconductor lasers are commonly used in optical transceivers for telecommunications and data communication networks. The lasers commonly used in the field of optical communication are edge-emitting lasers. The edge-emitting laser means that the light emitting direction of the laser is parallel to the active layer (a characteristic layer of the semiconductor laser), that is, in the horizontal direction, the light is emitted from the end face. The beam divergence angle of the edge-emitting laser is large, the spot is usually elliptical, and the coupling efficiency with the fiber is low. It usually requires a lens or other discrete optical components to be coupled to the fiber, and it needs to be cleaved into bars during testing, which results in ...

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Problems solved by technology

[0004] Aiming at the defects of the prior art, the object of the present invention is to provide a high-order surface grating surface-emitting semiconductor laser, which aims to solve the problem that the grating-coupled surface-emitting semiconductor laser has a relatively short grating period, and the etching depth of the grating is relatively limited. Problems that are not conducive to increasing the output power of the laser

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