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Absorption film system structure and preparation method of a wide-spectrum pyroelectric detector

A pyroelectric detector and film structure technology, applied in electric radiation detectors, vacuum evaporation plating, coatings, etc., can solve the problems of poor device process compatibility, affecting device response characteristics, and low reflectivity of porous black gold. , to achieve the effect of enhancing infrared absorption rate, improving process compatibility, and simplifying the preparation process

Active Publication Date: 2019-12-13
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

Black resin has a high infrared absorption rate, but it is not compatible with the device process, and has a large thermal resistance, which may hinder the transmission of heat to the sensitive film
Porous black gold has low reflectivity and high broad-spectrum absorption characteristics, but it has weak adhesion and breaks easily
In addition, some literatures reported that a graded refractive index anti-reflection layer was etched on the surface of the sensitive material lithium tantalate (LiTaO3) (A.Finn, etc., "Microstructuredsurface on LiTaO3-basedpyroelectricinfrareddetectors", IEEESensorsJournal, vol.11, pp.2204 , 2011), based on the structure of the anti-reflection layer, the absorption rate is significantly improved, but this method changes the surface morphology of the sensitive material, which affects the response characteristics of the device to a certain extent

Method used

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  • Absorption film system structure and preparation method of a wide-spectrum pyroelectric detector
  • Absorption film system structure and preparation method of a wide-spectrum pyroelectric detector

Examples

Experimental program
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Effect test

Embodiment 1

[0030] Such as figure 2 As shown, a wide-spectrum pyroelectric detector absorbing film structure, including three layers of metal film with gradually increasing porosity, the structure is made of LiTaO 3 A crystalline flake is spread out as the top layer of the pyroelectric sensitive cell 1 .

[0031] LiTaO 3 The pre-preparation process of crystal flakes is as follows: in LiTaO 3 The lower electrode 5 was prepared on the wafer; the LiTaO 3 The wafer is thinned to form the pyroelectric sensitive unit 1 .

[0032] Wash LiTaO 3 Crystal flakes, photolithographically patterned on the upper surface. The underlying nickel-chromium alloy film is prepared by magnetron sputtering technology as the underlying metal film 2, the process pressure is adjusted to 4Pa, the sputtering current is 0.6A, and a dense nickel-chromium metal layer is obtained. The porosity range is controlled at 15%, and the thickness range is controlled. at 10nm.

[0033] The metal film 3 in the middle layer ...

Embodiment 2

[0037] Such as figure 2 As shown, a wide-spectrum pyroelectric detector absorbing film structure, including three layers of metal film with gradually increasing porosity, the structure is made of LiTaO 3 A crystalline flake is spread out as the top layer of the pyroelectric sensitive cell 1 .

[0038] LiTaO 3 The pre-preparation process of the crystal sheet is: preparing the lower electrode 5 on the lithium tantalate wafer; thinning the lithium tantalate wafer by grinding and polishing to form the pyroelectric sensitive unit 1 .

[0039] Wash LiTaO 3 Crystal flakes, photolithographically patterned on the upper surface. The underlying metal film 2 is prepared by magnetron sputtering technology, which is a bismuth metal film. The process pressure is adjusted to 5Pa, and the sputtering current is 0.7A to obtain a dense bismuth metal layer. The porosity range is controlled at 20%, and the thickness range is controlled at 10nm. .

[0040] The middle layer metal thin film 3 is...

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Abstract

The invention discloses a wide-spectrum pyroelectric detector absorption film system structure and a preparation method thereof, belonging to the field of infrared absorption layers of pyroelectric detectors, and solves the problem of poor adhesion between porous materials and substrates in the prior art and can only be used alone Problems with being used as an absorbent layer. The film structure is prepared on the top layer of the sensitive unit of the pyroelectric detector, including three layers of metal film, the bottom metal film has low porosity and high density, and can maintain good adhesion with the substrate, and the middle layer of metal film serves as a transition Layer, the porosity is increased, the density is reduced, and the top metal film is a loose layer, which can effectively enhance the infrared absorption rate. The prepared metal absorbing layer can be used as the absorbing layer and the upper electrode of the detector at the same time, which greatly simplifies the preparation process, saves costs, improves process compatibility, and provides strong support for the development of high-performance pyroelectric detectors.

Description

technical field [0001] The invention relates to the technical field of infrared absorbing layers of pyroelectric detectors, in particular to a wide-spectrum pyroelectric detector absorbing film structure and a preparation method thereof. Background technique [0002] Pyroelectric detector is a kind of infrared radiation detection device, which is prepared by utilizing the characteristic of spontaneous polarization of pyroelectric body changing with temperature. Compared with other detectors, it not only maintains the advantages of thermal detectors working in the room temperature band, but also can withstand large radiation power, have a higher detection rate in a wide temperature and frequency range, and have a smaller time constant Features. Pyroelectric detectors are widely used in the fields of national defense, industry, medicine and scientific research, such as intrusion alarm, security monitoring, fire alarm, industrial production monitoring, aircraft and vehicle aux...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J5/34C23C14/18C23C14/24C23C14/35
CPCC23C14/18C23C14/185C23C14/24C23C14/35G01J5/34
Inventor 于贺太惠玲黎威志杜晓松刘子骥
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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