Light emitting diode and manufacturing method thereof
A technology for light-emitting diodes and manufacturing methods, which is applied in the manufacturing of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of affecting lithography productivity and high cost, and prevent poor adhesion, increase area, and reduce volume. Effect
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Embodiment 1
[0057] refer to figure 2 , the present embodiment provides a method for manufacturing a light emitting diode, comprising:
[0058] Step S101, providing a substrate;
[0059] Step S102, setting a buffer layer on the substrate;
[0060] Step S103, disposing an N-type semiconductor layer on the buffer layer;
[0061] Step S104, disposing a light-emitting layer on the N-type semiconductor layer;
[0062] Step S105, disposing a P-type semiconductor layer on the light-emitting layer;
[0063] Step S106, forming a transparent conductive layer on the P-type semiconductor layer, forming a first photoresist on the transparent conductive layer, patterning the transparent conductive layer, and retaining the first photoresist on the Partial etching of the P-type semiconductor layer, light-emitting layer, and N-type semiconductor layer to form a mesa;
[0064] Step S107, forming a protective layer on the mesa and the transparent conductive layer;
[0065] Step S108, forming a second ...
Embodiment 2
[0069] refer to Figure 3-Figure 18 , this embodiment provides a method for manufacturing a light emitting diode.
[0070] First, refer to Figure 3-Figure 7 , provide a substrate 201, along the axial direction, a buffer layer 202 is set on the substrate 201, an N-type semiconductor layer 203 is set on the buffer layer 202, a light-emitting layer 204 is set on the N-type semiconductor layer 203; P-type semiconductor layer 205 .
[0071] Further, refer to Figure 8-Figure 9 , make a transparent conductive layer 206 on the P-type semiconductor layer 205 by means of electron beam evaporation or sputtering, and form a first photoresist 207 on the transparent conductive layer 206, and then perform photolithography to make a required pattern. When , the transparent conductive layer 206 below the P electrode position is not open, refer to Figure 10-Figure 11 , keep the first photoresist 207, use inductively coupled plasma to partially etch the P-type semiconductor layer 205, the...
Embodiment 3
[0082] refer to Figure 19 , this embodiment provides a light emitting diode, comprising
[0083] substrate 301;
[0084] a buffer layer 302' disposed on the substrate 301;
[0085] An N-type semiconductor layer 303 disposed on the buffer layer 302;
[0086] A light-emitting layer 304 disposed on the N-type semiconductor layer 303;
[0087] P-type semiconductor layer 305 disposed on the light emitting layer 304;
[0088] A patterned transparent conductive layer 306 disposed on the P-type semiconductor layer 305;
[0089] A mesa formed by partially etching the P-type semiconductor layer 305, the light-emitting layer 304, and the N-type semiconductor layer 303;
[0090] The protective layer 307 disposed on the mesa and the transparent conductive layer 306, the protective layer 307 is etched to expose part of the N-type semiconductor layer 303 and part of the transparent conductive layer 306, and the exposed part of the transparent conductive layer 306 is etched to form an o...
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