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Combined In3+ and Ga3+ donor doped ZnO varistor ceramic and preparation method thereof

A varistor ceramic and donor doping technology, applied in the direction of varistor, varistor core, etc., can solve the aging life of ZnO varistor, the decrease of pulse current tolerance performance index, can not meet the industrial application, ZnO Lattice distortion and other problems, to achieve the effect of enhancing aging life, suppressing the decline of nonlinear coefficient, and suppressing the growth of leakage current

Active Publication Date: 2017-06-27
GUIZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the ion radius of Al is only 0.0535nm, and the ion radius of Zn is 0.074nm, the difference between the ion radii of the two is relatively large, and the formation of donor doping will lead to serious distortion of the ZnO lattice, which will inevitably lead to the aging life of ZnO varistors, pulse Performance indicators such as current tolerance have dropped significantly, which can no longer meet the needs of industrial applications

Method used

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  • Combined In3+ and Ga3+ donor doped ZnO varistor ceramic and preparation method thereof

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Effect test

Embodiment 1

[0026] Embodiment 1: a kind of In 3+ , Ga 3+ The ZnO varistor ceramic prepared by compound donor doping includes a base material and a dopant, and the base material includes ZnO: 90.5 parts, Bi 2 o 3 : 3.0 parts, MnO 2 : 0.5 parts, Sb 2 o 3 : 2.5 parts, Co 2 o 3 : 1 part, Cr 2 o 3 : 0.5 parts, 2 parts of seed crystal dopant material, the mass fraction ratio of said seed crystal dopant material is ZnO: Ga(NO 3 ) 3 :In(NO 3 ) 3 =94:4:2.

Embodiment 2

[0027] Embodiment 2: a kind of In 3+ , Ga 3+ The ZnO varistor ceramic prepared by compound donor doping includes a base material and a dopant, and the base material includes ZnO: 87 parts, Bi 2 o 3 : 2.0 parts, MnO 2 : 0.4 parts, Sb 2 o 3 : 1.5 parts, Co 2 o 3 : 0.5 parts, Cr 2 o 3 : 0.2 part, seed dopant: 1 part; the seed dopant is ZnO, Ga 2 o 3 and In 2 o 3 , whose mass fraction ratio is ZnO:Ga 2 o 3 : In 2 o 3 =90:0.1:0.1.

Embodiment 3

[0028] Embodiment 3: a kind of In 3+ , Ga 3+ The ZnO varistor ceramic prepared by compound donor doping includes a base material and a dopant material, and the base material includes ZnO: 95 parts, Bi 2 o 3 : 4.0 parts, MnO 2 : 0.7 parts, Sb 2 o 3 : 3.5 parts, Co 2 o 3 : 1.5 parts, Cr 2 o 3 : 1.0 parts, seed dopant: 5 parts; the seed dopant is ZnO, Ga 2 o 3 and In 2 o 3 , whose mass fraction ratio is ZnO:Ga 2 o 3 : In 2 o 3 =95:5:5.

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Abstract

The invention discloses combined In3+ and Ga3+ donor doped ZnO varistor ceramic and a preparation method thereof; the combined In3+ and Ga3+ donor doped ZnO varistor ceramic comprises a base material and a doping material, wherein the base material comprises, by weight, 87-95 parts of ZnO, 2.0-4.0 parts of Bi2O3, 0.4-0.7 part of MnO2, 1.5-3.5 parts of Sb2O3, 0.5-1.5 parts of Co2O3, 0.2-1.0 part of Cr2O3, and 1-5 parts of seed crystal doping material; the seed crystal doping material comprises ZnO, Ga2O3 and In2O3 having a mass ratio of (90-95):(0.1-5):(0.1-5). The combined In3+ and Ga3+ donor doped ZnO varistor ceramic has the advantages that ZnO grain resistivity can be decreased and ZnO lattice distortion can be controlled, and also has the advantages of low finish ZnO varistor residue long ageing life and high pulse current tolerance.

Description

technical field [0001] The invention relates to a ZnO varistor ceramic and a preparation method thereof, in particular to an Al-free 3+ Doped In 3+ , Ga 3+ Composite donor-doped ZnO varistor ceramics and a preparation method thereof. Background technique [0002] ZnO varistor is made of ZnO as the main raw material, adding a small amount of Bi 2 o 3 、Co 3 o 4 , MnO 2 , Sb 2 o 3 、Cr 2 o 3 And other raw materials, prepared by ceramic sintering process. The varistor has the advantages of good nonlinearity and large flow capacity, and it has been widely used as a lightning surge protection component in electronic circuits and power systems. With the rapid development of microelectronic information technology, the requirements for miniaturization, integration and modularization of components are becoming more and more urgent. Miniaturized electronic components have high sensitivity and low overvoltage resistance level, which increases the demand for lightning protect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453C04B35/626C04B35/634C04B35/638H01C7/112
CPCC04B35/453C04B35/62605C04B35/63416C04B35/638C04B2235/3241C04B2235/3267C04B2235/3275C04B2235/3284C04B2235/3286C04B2235/3294C04B2235/3298C04B2235/6567H01C7/112
Inventor 庞驰张宁方超周芳
Owner GUIZHOU UNIV
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