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Manufacturing method of single crystal silicon

A manufacturing method and technology of a single crystal manufacturing device, which are applied in the directions of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems such as hindering the crystallization of dislocation-free, and achieve the reduction of deviation, the improvement of yield, and the suppression of dislocations. misplaced effect

Active Publication Date: 2019-08-06
SUMCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if a high voltage is applied between the power supply terminals of the induction heating coil, there is a problem that discharge occurs in the slit of the induction heating coil during the growth of the single crystal, preventing dislocation-free crystallization.
[0006] Patent Document 2 states that the reason why the total gas blowing amount of nitrogen is within the above range is that if the growth of single crystal silicon continues in an atmosphere of a mixed gas of nitrogen and argon, the segregation coefficient of nitrogen to silicon will decrease even though nitrogen is continuously supplied. as small as 7×10 -4 , so the concentration of nitrogen in the silicon melt increases, and the solid solubility of nitrogen in single crystal silicon exceeds 4.5×10 15 atoms / cm 3 , causing dislocations in the single crystal

Method used

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  • Manufacturing method of single crystal silicon
  • Manufacturing method of single crystal silicon
  • Manufacturing method of single crystal silicon

Examples

Experimental program
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Effect test

Embodiment

[0047] Next, examples of the present invention will be described in detail together with comparative examples. The silicon single crystals in Examples and Comparative Examples described below are experimentally grown silicon single crystals.

[0048]

[0049] use figure 1In the shown single crystal manufacturing apparatus 10, a polycrystalline silicon rod is used as a silicon raw material rod 11, and a single crystal silicon 12 having a diameter of 100 mm is grown by the FZ method. The pressure in the furnace 13 was set to a predetermined pressure, and the solenoid valve 33 of the first supply pipe 31 was continuously opened from the start to the end of the growth. When the flow rate of the argon gas flowing through the main supply pipe 26 passing through the flowmeter 27 is set to 100%, the flow rate of the first supply pipe 31 is adjusted to 0.1% by the flow meter 34 of the nitrogen gas and the argon gas, and the The mixed gas is supplied into the furnace from the gas su...

Embodiment 2

[0055] As a point of difference from Comparative Example 1, first, the mass of the raw material was increased at a ratio such that the length of the straight portion of Comparative Example 1 was 108 when the length of the straight portion was 108. In addition, nitrogen gas was added so that the ratio of nitrogen doping flow rate to 100% of the flow rate of argon gas passing through the flowmeter 37 of the second supply pipe 32 when the solenoid valve 36 of the second supply pipe 32 was opened was 0.5%. That is, the nitrogen concentration in the mixed gas was set to 0.6%. And, in the stage where the formation of the apical cone part is completed and the straight part is formed with a target crystal diameter of 100 mm, the solenoid valve 36 of the second supply pipe 32 is closed, and only the solenoid valve 33 of the first supply pipe 31 is opened. However, in order to suppress the increase of the nitrogen concentration in the longitudinal direction of the straight cylinder, the...

Embodiment 3

[0057] As a point of difference from Comparative Example 1, first, the mass of the raw material was increased at a ratio such that the length of the straight portion of Comparative Example 1 was 108 when the length of the straight portion was 108. In addition, nitrogen gas was added so that the nitrogen doping flow ratio was 0.6% relative to 100% of the flow rate of argon gas passing through the flow meter 37 of the second supply pipe 32 when the solenoid valve 36 of the second supply pipe 32 was opened. That is, the nitrogen concentration in the mixed gas was set to 0.7%. And, in the stage where the formation of the apical cone part is completed and the straight part is formed with a target crystal diameter of 100 mm, the solenoid valve 36 of the second supply pipe 32 is closed, and only the solenoid valve 33 of the first supply pipe 31 is opened. However, in order to suppress the increase of the nitrogen concentration in the longitudinal direction of the straight cylinder, t...

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Abstract

To reduce discharge in a slit or the like of an induction heating coil and to reduce variations in nitrogen concentration between a straight body portion on a top cone side of a single crystal and a straight body portion on a bottom cone side, a dislocation portion and a void defect It does not cause crystal defects. Increase the product conversion rate without crystal defects of long dislocated portion of silicon single crystal and void defect due to increase of charged amount of silicon raw material. In the FZ method of the present invention, a mixed gas of nitrogen and argon is supplied into a furnace. During the growth of the silicon single crystal, the nitrogen concentration in the mixed gas is changed so that the nitrogen concentration of the straight body portion of the silicon single crystal is within the range of 2.0*1014 atoms / cm<3> or more and 4.0*1015 atoms / cm<3> or less to grow a silicon single crystal.

Description

technical field [0001] The present invention relates to a method for producing single crystal silicon based on the following floating zone melting method (hereinafter referred to as the FZ method): using an induction heating coil to heat and melt a silicon raw material rod to form a floating zone, and by moving the floating zone, the rod-shaped single crystalline silicon growth. More specifically, it relates to a method for producing a silicon single crystal that prevents discharge in a slit of an induction heating coil, etc., suppresses the occurrence of crystal defects, and improves the yield of the single crystal. It should be noted that the "single crystal yield" in this specification refers to a straight tube that can be handled as a product free from dislocations and pore defects relative to the entire straight tube part of single crystal silicon when growing single crystal silicon. proportion of the department. Background technique [0002] The FZ method is a method...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/06C30B13/12C30B13/28
CPCC30B13/12C30B13/28C30B29/06
Inventor 铃木优作
Owner SUMCO CORP