Expanded g-C3N4 photocatalyst and preparation method thereof

A technology of photocatalysts and photocatalytic materials, applied in the field of physical chemistry, can solve problems such as cumbersome methods and non-environmental protection
CN106902857AActive Publication Date: 2017-06-30LANZHOU UNIVERSITY

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
LANZHOU UNIVERSITY
Publication Date
2017-06-30

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Abstract

The invention discloses an expanded g-C3N4 photocatalyst and a preparation method thereof and belongs to the technical field of material preparation and photocatalysis. According to the catalyst, only urea or melamine is utilized as a precursor and is directly subjected to two-step heat treatment in air, and g-C3N4 powder is obtained; the g-C3N4 powder is expanded by means of a rapid gasification process of ethanol under the vacuum heating condition, and the expanded g-C3N4 photocatalytic material with high activity is obtained. The prepared expanded g-C3N4 photocatalytic material has high adsorption capacity and excellent visible light degradation and hydrogen production capabilities. The expanded g-C3N4 photocatalyst and the preparation method have the remarkable advantages as follows: the cost is low, the process is simple, conditions are mild and stable, the effect is obvious, and large-scale production is facilitated.
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Description

technical field

[0001] The invention belongs to the field of physical chemistry, and in particular relates to a photocatalyst and a preparation method thereof. Background technique

[0002] At present, the problems of energy shortage and environmental pollution are becoming more and more prominent, and photocatalytic technology is considered as a low-cost, environmentally friendly green energy and environmental governance technology. Preparation of photocatalytic materials with high performance, wide response range and low cost is the main problem to be solved in photocatalytic technology.

[0003] Graphite-like carbon nitride (g-C 3 N 4 ) has a graphite-like layered structure with C between the layers 3 N 3 Ring or C 6 N 7 The rings are connected by the terminal N atoms to form a layer of infinitely expanding planes, which belong to non-metallic compound semiconductors. It has a band gap of 2.7eV, has absorption ability to visible light (λ>420nm), has high stabili...

Claims

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