MEMS (Micro-electromechanical Systems) device and preparation method thereof, and electronic device

Abstract

The invention relates to an MEMS (Micro-electromechanical Systems) device and a preparation method thereof, and an electronic device. The method comprises the following steps: step S1, providing a substrate, wherein a functional material layer having a dimension smaller than that of the substrate is formed on the substrate to form a step shaped structure, and a buffer layer with a round top angle is formed on the substrate and on the sidewall of the functional material layer; step S2, forming a covering layer on the buffer layer and the functional material layer to cover the functional material layer; and step S3, forming a first metal layer and a second metal layer alternately on the covering layer to form a metal laminated structure which at least comprises 4 layers. The method of the invention has the following advantages: 1), by adding an oxide OX, a (corner rounding) effect is obtained and meanwhile the stress of an upper layer metal film is reduced, and the problem of (seam void) is solved; 2), since the stress changes, the subsequent possible delamination problem is also reduced; and 3), no other side effects are brought to the subsequent process.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular, the invention relates to a MEMS device, a preparation method thereof, and an electronic device. Background technique [0002] With the continuous development of semiconductor technology, in the market of sensor (motion sensor) products, smart phones, integrated CMOS and micro-electromechanical system (MEMS) devices have increasingly become the most mainstream and advanced technology, and with the update of technology, The development direction of this kind of transmission sensor products is smaller size, high-quality electrical performance and lower loss. [0003] Among them, micro-electro-mechanical systems (MEMS) have obvious advantages in terms of volume, power consumption, weight, and price. So far, various sensors have been developed, such as pressure sensors, acceleration sensors, inertial sensors, and other sensors. [0004] With the continuous development of semiconductor tec...

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Problems solved by technology

[0005] In the field of MEMS, for example, during the preparation of microphone devices, a 32K SiN film is usually formed in contact with polysilicon (poly) as a shock rod. Film quality, stress (stress), and R.I. all have relatively strict requirements, and the process for preparing SiN films cannot meet the requirements at present. The film of SiN is transferred to the structure wafer by the preparation process of the prior art It is found that seams and / or holes appear after etching, and the seams extend all the way to the metal film layer behind, causing device failure

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