Radon Measuring Device Based on Electrostatic Collection Method Based on Semiconductor Refrigeration Technology

An electrostatic collection method and semiconductor technology, applied in the field of radon measuring instrument, can solve the problems of reducing the performance requirements of semiconductor detectors and amplifying circuits, reducing the cost of instruments, etc., and achieve the effect of improving portability, reducing instrument costs, and avoiding temperature drift problems

Active Publication Date: 2019-08-09
中核资源发展有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a device for measuring radon by electrostatic collection method based on semiconductor refrigeration technology, which can achieve stable and high collection efficiency without desiccant, thereby solving the problem of the influence of sample gas temperature and humidity on the radon measuring instrument by electrostatic collection method ; Solve the temperature drift problem of semiconductor detectors and amplifier circuits at the same time, reduce the performance requirements for semiconductor detectors and amplifier circuits, and greatly reduce the cost of instruments

Method used

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  • Radon Measuring Device Based on Electrostatic Collection Method Based on Semiconductor Refrigeration Technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] As an online continuous radon meter. The sampling pumps 2 work continuously, and stably send the sample gas to the collection chamber 5 after passing through the filter membrane 1 . The temperature of the collection chamber 5 is controlled in a small temperature range slightly higher than 0° C., such as 1° C.±0.5° C., but not limited to this temperature range. After the sample gas reaches the collection chamber 5, the temperature drops rapidly, resulting in supersaturation of water vapor, and most of the water vapor condenses. Condensed water can flow along the four walls of the collection chamber 5 to the exhaust port at the bottom of the collection chamber, and be discharged from the collection chamber 5 and the instrument along with the gas. The water content of the gas in the collection chamber is greatly reduced, and the absolute amount of water contained can be reduced to 5g / m 3 At this time, the influence on the collection efficiency is very small.

[0033] A fa...

Embodiment 2

[0038] As a portable radon meter, it works in intermittent mode.

[0039] Since the sampling pump 2, the hot side 3 of the semiconductor cooler, the cold side 4 of the semiconductor cooler and its cooling fan work intermittently, it can save power and reduce the consumption of sample gas, but the working process is a little more complicated.

[0040] The instrument starts to measure, the sampling pump 2 works for a period of time, and the sample gas enters the collection chamber 5 after passing through the filter membrane 1. After ensuring that the gas in the collection chamber 5 is replaced with the sample gas to be measured, the sampling pump 2 stops working, and the semiconductor manufacturing The cooling plates (3 and 4) start to refrigerate, reducing the temperature of the radon collecting chamber 5 to a small temperature range near 0°C, such as (-3°C--1°C).

[0041] A fan is installed on the radiator and runs synchronously with the semiconductor cooler to reduce the temp...

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Abstract

The invention belongs to the technical field of radon measuring instruments, and specifically relates to an electrostatic collection radon measuring device based on a semiconductor refrigeration technology. The device comprises a filter membrane, a sampling pump, a hot side of a semiconductor refrigeration plate, a cold side of the semiconductor refrigeration plate, a collection chamber, a semiconductor detector, an amplifier circuit, a heat insulation layer, and an energy spectrum analysis system. Sample gas enters the collection chamber through the filter membrane and the sampling pump. The collection chamber is surface-mounted on the cold side of the semiconductor refrigeration plate. The semiconductor detector is disposed inside the collection chamber. The amplifier circuit is disposed outside the collection chamber. The cold side of the semiconductor refrigeration plate, the collection chamber and the amplifier circuit are wrapped in the heat insulation layer. A radiator is surface-mounted on the hot side of the semiconductor refrigeration plate. The energy spectrum analysis system is connected with the amplifier circuit. The problem that the humidity of sample gas has an influence on an electrostatic collection radon measuring instrument can be solved. Moreover, the temperature drift problem of the semiconductor detector and the amplifier circuit is solved, the performance requirement on the semiconductor detector and the amplifier circuit is lowered, and the cost of the instrument is reduced greatly.

Description

technical field [0001] The invention belongs to the technical field of radon measuring instruments, and in particular relates to a device for measuring radon by electrostatic collection method based on semiconductor refrigeration technology. Background technique [0002] The electrostatic collection (electrostatic adsorption) method is currently a very widely used method for measuring radon concentration. The electrostatic field collects the radon daughter RaA (Po-218) generated by the decay of radon gas on the surface of the semiconductor detector, and passes through the semiconductor detector. Measure the alpha particles emitted by the decay of radon daughters, so as to realize the measurement of radon concentration. Compared with other conventional radon measurement methods, such as ionization chamber method and scintillation chamber method, electrostatic collection method has high sensitivity, fast recovery, low detection limit, and can realize radon / thorium simultaneous...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01T1/36
CPCG01T1/366
Inventor 冯威锋王腾飞关键曹放丁海云侯江柳杰
Owner 中核资源发展有限公司
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