Multifunctional double-lamp filament ion source

Abstract

The invention discloses a multifunctional double-filament ion source, which comprises an arc chamber cavity, into which process gas is introduced to generate plasma inside; an anode cylinder, also serving as an anode, is installed in the arc chamber cavity and insulated from it; two The hot cathodes are respectively arranged on both sides of the anode cylinder and insulated from the anode cylinder and the arc chamber cavity; two cathodes are respectively arranged on both sides of the anode cylinder and are respectively insulated from the anode cylinder, the arc chamber cavity and the hot cathode; The metal sample is installed at the bottom of the arc chamber cavity and connected with the arc chamber cavity; the water cooling plate has a separate water cooling channel and the cooling bottom plate is installed under the arc chamber cavity; the source magnetic field, the magnetic force line is along the connection between the hot cathode and the reflector Wire. The invention can be used to generate various ions from the gaseous state to almost all metals, and has the excellent performance of obtaining a large beam of gaseous element ion beams and solid metal beams in one ion source, and can generate more 2- and 3-valent ions, especially Suitable for high-energy ion implanters.

Description

technical field [0001] The invention relates to semiconductor device manufacturing equipment, in particular to a multifunctional double-filament ion source. Background technique [0002] The manufacturing technology and process of semiconductor devices are very complicated, and ion implantation doping is a very critical process in the manufacturing process of semiconductor devices. Compared with the conventional thermal doping process, the ion implantation doping process has the advantages of high-precision dose uniformity and repeatability, and small lateral diffusion, which overcomes the limitations of conventional processes and improves the integration, speed, yield and life of the circuit. , reducing cost and power consumption. With the gradual development of semiconductor materials from the first generation of silicon to the third generation of SiC, the elements that need to be doped by ion implantation doping process are gradually developed from ordinary boron, phosph...

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Problems solved by technology

The gasification of solid materials requires a high-temperature crucible and the corresponding power supply and control system. The power supply and control system of gaseous materials are independent, resulting in a very complicated structure and high cost of the ion source structure and high cost; a mature ion source for sputtering solid materials There is a Penning source, but its structure is not compatible with the mature hot cathode ion source used by the implanter. Two systems are also required, and the beam intensity is limited by the inherent working principle, which makes it difficult to meet the continuous increase i

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