Porous indium oxide nanometer material and preparation method thereof

A technology of nanomaterials and indium oxide, which is applied in the field of nanomaterials, can solve the problems of complex template removal process, complicated preparation process, and low yield, and achieve the effect of uniform morphology, simple preparation method, and strong selectivity

Active Publication Date: 2017-08-11
SHENZHEN LOTUT INNOVATION DESIGN CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the specific surface area of ​​porous nanoparticles prepared by this method is about 53-120, the preparation process is complex, time-consuming, low yield, and requires precise

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  • Porous indium oxide nanometer material and preparation method thereof
  • Porous indium oxide nanometer material and preparation method thereof
  • Porous indium oxide nanometer material and preparation method thereof

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[0028] The invention provides a method for preparing a porous indium oxide nanomaterial, comprising the following steps:

[0029] (1) mixing indium salt, organic ligand, water and organic solvent to obtain a reaction solution;

[0030] (2) The reaction solution obtained in the step (1) is subjected to a hydrothermal reaction to obtain a porous indium oxide nanomaterial precursor;

[0031] (3) Calcining the porous indium oxide nanomaterial precursor obtained in the step (2) to obtain a porous indium oxide nanomaterial.

[0032] The invention mixes indium salt, organic ligand, water and organic solvent to obtain a reaction solution. In the present invention, the molar ratio of the indium salt, organic ligand, water and organic solvent is preferably 1:(1.5-10.5):(285-725):(350-850), more preferably 1:(3 ~8):(350~600):(400~800), most preferably 1:(4~6):(450~500):(500~700).

[0033] In the present invention, the indium salt preferably includes one or more of indium nitrate, indi...

Embodiment 1

[0047] Dissolve 0.2g of indium sulfate in 5mL of water, and dissolve 0.324g of dimethylimidazole in 25mL of DMF; mix the above two solutions, and ultrasonicate for 15min to obtain a reaction solution; the molar ratio of indium salt, organic ligand, water to solvent For: 1:10.2:720:837.

[0048] The reaction solution was added to a polytetrafluoroethylene reactor, and placed in a microwave reactor at 95°C for 5 minutes to obtain a precipitate; the precipitate was washed three times with DMF, centrifuged and dried in a vacuum oven at 120°C for 12 hours to obtain In 2 o 3 Precursor.

[0049] The above-mentioned precursor was calcined at 400°C for 1 hour, the heating rate was 1°C / min, and the temperature was naturally cooled to room temperature to obtain a gas-sensitive material. The sample was analyzed by XRD, and the results are shown in figure 1 . Depend on figure 1 It can be seen that the porous indium oxide nanomaterial prepared in this example is a cubic phase In 2 o 3...

Embodiment 2

[0052] Take 0.2g InCl 3 Dissolve in 5mL of water, take 0.25g of terephthalic acid and dissolve in 25mL of DMF; mix the above two solutions, and ultrasonicate for 15min to obtain a reaction solution; the molar ratio of indium salt, organic ligand, water and solvent is: 1:1.7 :307.2:357.4.

[0053] The reaction solution was added to a polytetrafluoroethylene reactor, and placed in a microwave reactor at 105°C for 10 minutes to obtain a precipitate; the precipitate was washed three times with DMF, centrifuged and dried in a vacuum oven at 150°C for 24 hours to obtain In 2 o 3 Precursor.

[0054] The above-mentioned precursor was calcined at 450° C. for 4 h, the heating rate was 1° C. / min, and the temperature was naturally lowered to room temperature to obtain a porous indium oxide nanomaterial.

[0055] The scanning electron micrograph of the sample prepared in this embodiment is as follows: figure 2 as shown, figure 2 It shows that the obtained porous indium oxide nanomat...

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Abstract

The invention provides a porous indium oxide nanometer material and a preparation method thereof. The preparation method for the porous indium oxide nanometer material, provided by the invention, comprises the following steps: mixing indium salt, organic ligand, water and organic solvent, thereby acquiring a reaction solution; performing hydrothermal reaction, thereby acquiring a porous indium oxide nanometer material precursor; lastly, burning, thereby acquiring the porous indium oxide nanometer material. According to the invention, indium salt, organic ligand, water and organic solvent are taken as raw materials, the precursor with an organic skeleton structure is acquired through hydrothermal reaction, and then the precursor is burned so as to acquire the porous indium oxide nanometer material; the preparation method is simple, no template agent is required and the yield is high; an experimental result proves that the yield of the porous indium oxide nanometer material prepared according to the preparation method provided by the invention is 30.2-35.8%.

Description

technical field [0001] The invention relates to the technical field of nanomaterials, in particular to a porous indium oxide nanomaterial and a preparation method thereof. Background technique [0002] Ethanol is an important chemical, which is widely used in industry and people's daily life and plays an important role. At the same time, ethanol is easy to volatilize at room temperature, and it will cause great damage to the environment when it enters the atmosphere; on the other hand, there are currently many beverages and foods containing ethanol, and traffic violations of drunk driving occur frequently. Therefore, it is urgent to develop high-efficiency ethanol gas-sensing sensing materials to realize rapid detection of ethanol concentration. [0003] As an important semiconductor oxide, In 2 o 3 It has a wide band gap (3.55-3.75) and a small resistivity, and shows good selectivity and response to ethanol and other gases, and is an ideal gas-sensing material. In 2 o ...

Claims

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Application Information

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IPC IPC(8): C01G15/00B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01G15/00C01P2002/72C01P2004/04C01P2004/16C01P2004/32C01P2004/50C01P2004/64C01P2006/12C01P2006/16
Inventor 陶凯韩雪韩磊
Owner SHENZHEN LOTUT INNOVATION DESIGN CO LTD
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