Semiconductor structure and formation method thereof
A semiconductor and isolation structure technology, applied in the field of semiconductor structure and its formation, can solve the problem of difficult control of the fin height of transistors, achieve good electrical performance, reduce difficulty, and reduce the effect of impact
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[0031] The prior art method for forming a semiconductor structure has many problems, for example, it is difficult to control the height of the fin of the fin field effect transistor.
[0032] Now combining the semiconductor structure of the prior art, analyze the reasons why the height of the fin of the semiconductor structure is difficult to control:
[0033] Figure 1 to Figure 5 It is a schematic diagram of each step of a method for forming a semiconductor structure. The method for forming the semiconductor structure includes:
[0034] Please refer to figure 1 , A substrate 100 is provided, and a mask layer 110 is formed on the substrate 100.
[0035] Please refer to figure 2 Etch the substrate 100 using the mask layer 110 as a mask to form the initial fin 120.
[0036] Please refer to image 3 , Forming an isolation layer 131 covering the initial fin 120.
[0037] Please refer to Figure 4 , The isolation layer 131 is planarized by chemical mechanical polishing.
[0038] Please refe...
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