Semiconductor structure and formation method thereof

Abstract

The invention provides a semiconductor structure and a formation method thereof. The formation method comprises the steps that a substrate is provided, and the substrate comprises a first region and a second region; an etching barrier layer is formed on the substrate, and the steps of forming the etching barrier layer comprise that a first etching barrier layer is formed on the surface of the substrate of the first region; a fin material layer is formed on the substrate and the first etching barrier layer, and the fin material layer and the first etching barrier layer are different in material; the fin material layer of the first region and the second region and the substrate of the second region are patterned, a first opening from which the etching barrier layer is exposed is formed in the first region, and initial fins are formed in the second region; an isolating layer covering the first etching barrier layer of the first opening and the substrate between the initial fins is formed, and the etching barrier layer and the isolating layer are different in component elements; and the isolating layer is etched to generate etching by-product, the etching by-product is detected and etching is performed until the etching by-product changes. Control of the transistor fin height can be realized through the etching barrier layer.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher component density and higher integration, and the effective length of the gate is also continuously reduced, resulting in weakening of the control ability of the gate to the channel. [0003] The gate of the Fin Field-Effect Transistor (FinFET) has a forked 3D structure similar to a fish fin. The channel of the FinFET protrudes from the surface of the substrate to form a fin, and the gate covers the top surface and sidewall of the fin, so that an inversion layer is formed on each side of the channel, which can control the connection and connection of the circuit on both sides of the circuit. disconnect. This design can increase the control of the gate to...

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Problems solved by technology

[0004] However, the method for forming the semiconductor structure in the prior art has the disadvantage that it is difficult to control the fin height of the transistor during the process of forming the fin field effect transistor.

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